High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

Fuente: arXiv

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Bibliographic Details
Main Authors:	Zettler, J. K., Hauswald, C., Corfdir, P., Musolino, M., Geelhaar, L., Riechert, H., Brandt, O., Fernández-Garrido, S.
Format:	Preprint
Published:	2024
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2402.00583