High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
Fuente:
arXiv
Guardado en:
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2024
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866913219133571072 |
|---|---|
| author | Zettler, J. K. Hauswald, C. Corfdir, P. Musolino, M. Geelhaar, L. Riechert, H. Brandt, O. Fernández-Garrido, S. |
| author_facet | Zettler, J. K. Hauswald, C. Corfdir, P. Musolino, M. Geelhaar, L. Riechert, H. Brandt, O. Fernández-Garrido, S. |
| contents | In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approaches to minimize the incubation time and thus facilitate significantly higher growth temperatures (up to 875$^{\circ}$C). We achieve this by: (i) using III/V flux ratios larger than one to compensate for Ga desorption, (ii) introducing a two-step growth procedure, and (iii) using an AlN buffer layer to favor GaN nucleation. The GaN nanowire ensembles grown at so far unexplored substrate temperatures exhibit excitonic transitions with sub-meV linewidths and the low-temperature photoluminescence spectra are comparable to those of state-of-the-art free-standing GaN layers grown by hydride vapor phase epitaxy. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_00583 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN Zettler, J. K. Hauswald, C. Corfdir, P. Musolino, M. Geelhaar, L. Riechert, H. Brandt, O. Fernández-Garrido, S. Materials Science In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approaches to minimize the incubation time and thus facilitate significantly higher growth temperatures (up to 875$^{\circ}$C). We achieve this by: (i) using III/V flux ratios larger than one to compensate for Ga desorption, (ii) introducing a two-step growth procedure, and (iii) using an AlN buffer layer to favor GaN nucleation. The GaN nanowire ensembles grown at so far unexplored substrate temperatures exhibit excitonic transitions with sub-meV linewidths and the low-temperature photoluminescence spectra are comparable to those of state-of-the-art free-standing GaN layers grown by hydride vapor phase epitaxy. |
| title | High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN |
| topic | Materials Science |
| url | https://arxiv.org/abs/2402.00583 |