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High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Zettler, J. K., Hauswald, C., Corfdir, P., Musolino, M., Geelhaar, L., Riechert, H., Brandt, O., Fernández-Garrido, S.
Formato:	Preprint
Publicado:	2024
Materias:	Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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