ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures

Fuente: arXiv

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Bibliographic Details
Main Authors:	John, Philipp, Trampert, Achim, Van Dinh, Duc, Spallek, Domenik, Lähnemann, Jonas, Kaganer, Vladimir, Geelhaar, Lutz, Brandt, Oliver, Auzelle, Thomas
Format:	Preprint
Published:	2024
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2402.00702