ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866913723782791168 |
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| author | John, Philipp Trampert, Achim Van Dinh, Duc Spallek, Domenik Lähnemann, Jonas Kaganer, Vladimir Geelhaar, Lutz Brandt, Oliver Auzelle, Thomas |
| author_facet | John, Philipp Trampert, Achim Van Dinh, Duc Spallek, Domenik Lähnemann, Jonas Kaganer, Vladimir Geelhaar, Lutz Brandt, Oliver Auzelle, Thomas |
| contents | We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]$||$GaN($1\bar{1}00$)[0001], providing a congruent, low-symmetry GaN/ScN interface. The 13.1 % uniaxial lattice mismatch occurring in this orientation mostly relaxes within the first few monolayers of growth by forming a coincidence site lattice, where 7 GaN planes coincide with 8 ScN planes, leaving the ScN surface nearly free of extended defects. Overgrowth of the ScN with GaN leads to a kinetic stabilization of the zinc blende phase, that rapidly develops wurtzite inclusions nucleating on {111} nanofacets, commonly observed during zinc blende GaN growth. Our ScN/GaN($1\bar{1}00$) platform opens a new route for the epitaxy of twin-free metal-semiconductor heterostructures made of closely lattice-matched GaN, ScN, HfN and ZrN compounds. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_00702 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures John, Philipp Trampert, Achim Van Dinh, Duc Spallek, Domenik Lähnemann, Jonas Kaganer, Vladimir Geelhaar, Lutz Brandt, Oliver Auzelle, Thomas Materials Science We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]$||$GaN($1\bar{1}00$)[0001], providing a congruent, low-symmetry GaN/ScN interface. The 13.1 % uniaxial lattice mismatch occurring in this orientation mostly relaxes within the first few monolayers of growth by forming a coincidence site lattice, where 7 GaN planes coincide with 8 ScN planes, leaving the ScN surface nearly free of extended defects. Overgrowth of the ScN with GaN leads to a kinetic stabilization of the zinc blende phase, that rapidly develops wurtzite inclusions nucleating on {111} nanofacets, commonly observed during zinc blende GaN growth. Our ScN/GaN($1\bar{1}00$) platform opens a new route for the epitaxy of twin-free metal-semiconductor heterostructures made of closely lattice-matched GaN, ScN, HfN and ZrN compounds. |
| title | ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures |
| topic | Materials Science |
| url | https://arxiv.org/abs/2402.00702 |