Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs
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arXiv
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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866914664183496704 |
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| author | Feijoo, Pedro C. Kauerauf, Thomas Toledano-Luque, María Togo, Mitsuhiro Andrés, Enrique San Groeseneken, Guido |
| author_facet | Feijoo, Pedro C. Kauerauf, Thomas Toledano-Luque, María Togo, Mitsuhiro Andrés, Enrique San Groeseneken, Guido |
| contents | In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-k and TiN metal electrode. For the 0.8-nm EOT FinFETs, it is found that TDDB lifetime is consistent with results of planar devices for areas around 1e-8 cm2, implying that the FinFET architecture does not seem to introduce new failure mechanisms. However, for devices with smaller area, the extrapolated voltage at a ten-year lifetime for soft breakdown (SBD) does not meet the specifications, and as a consequence, the SBD path wear-out will have to be included in the final extrapolation. Furthermore, it is shown that for EOTs smaller than 0.8 nm, the TDDB reliability on n-type FinFETs is challenged by the high leakage currents. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_00886 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs Feijoo, Pedro C. Kauerauf, Thomas Toledano-Luque, María Togo, Mitsuhiro Andrés, Enrique San Groeseneken, Guido Mesoscale and Nanoscale Physics Applied Physics In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-k and TiN metal electrode. For the 0.8-nm EOT FinFETs, it is found that TDDB lifetime is consistent with results of planar devices for areas around 1e-8 cm2, implying that the FinFET architecture does not seem to introduce new failure mechanisms. However, for devices with smaller area, the extrapolated voltage at a ten-year lifetime for soft breakdown (SBD) does not meet the specifications, and as a consequence, the SBD path wear-out will have to be included in the final extrapolation. Furthermore, it is shown that for EOTs smaller than 0.8 nm, the TDDB reliability on n-type FinFETs is challenged by the high leakage currents. |
| title | Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2402.00886 |