Gadolinium scandate by high-pressure sputtering for future generations of high-k dielectrics
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arXiv
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| Auteurs principaux: | , , , |
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| Format: | Preprint |
| Publié: |
2024
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| _version_ | 1866929231511945216 |
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| author | Feijoo, Pedro Carlos Pampillón, María Ángela Andrés, Enrique San Fierro, José Luis G. |
| author_facet | Feijoo, Pedro Carlos Pampillón, María Ángela Andrés, Enrique San Fierro, José Luis G. |
| contents | Gd-rich gadolinium scandate (Gd2-xScxO3) was deposited by high-pressure sputtering on (100) silicon by alternating the deposition of lower than 0.5 nm thick films of its binary components: Sc2O3 and Gd2O3. The formation of the ternary oxide was observed after the thermal treatments, with a high increase in the effective permittivity of the dielectric (up to 21). The silicon diffuses into the Gd2-xScxO3 films, which show an amorphous character. After the annealing no interfacial silicon oxide is present. CHF-VG curves indicated low hysteresis (55 mV) and a density of interfacial defects of 6e11 eV-1 cm-2. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_00887 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Gadolinium scandate by high-pressure sputtering for future generations of high-k dielectrics Feijoo, Pedro Carlos Pampillón, María Ángela Andrés, Enrique San Fierro, José Luis G. Materials Science Applied Physics Gd-rich gadolinium scandate (Gd2-xScxO3) was deposited by high-pressure sputtering on (100) silicon by alternating the deposition of lower than 0.5 nm thick films of its binary components: Sc2O3 and Gd2O3. The formation of the ternary oxide was observed after the thermal treatments, with a high increase in the effective permittivity of the dielectric (up to 21). The silicon diffuses into the Gd2-xScxO3 films, which show an amorphous character. After the annealing no interfacial silicon oxide is present. CHF-VG curves indicated low hysteresis (55 mV) and a density of interfacial defects of 6e11 eV-1 cm-2. |
| title | Gadolinium scandate by high-pressure sputtering for future generations of high-k dielectrics |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2402.00887 |