Photoexcited carriers transfer properties in a doped double quantum dots photocell

Fuente: arXiv
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Autori principali: Zhu, Sheng-Nan, Zhao, Shun-Cai, Chen, Lin-Jie, Fang, Qing
Natura: Preprint
Pubblicazione: 2024
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author Zhu, Sheng-Nan
Zhao, Shun-Cai
Chen, Lin-Jie
Fang, Qing
author_facet Zhu, Sheng-Nan
Zhao, Shun-Cai
Chen, Lin-Jie
Fang, Qing
contents Identifying the behavior of photoexcited carriers is one method for empirically boosting their transfer efficiencies in doped double quantum dots (DQDs) photocells. The photoexcited carriers transfer qualities were assessed in this study by the output current, power, and output efficiency in the multi-photon absorption process for a doped DQDs photocell, and an optimization technique is theoretically obtained for this proposed photocell model. The results show that some structure parameters caused by doping, such as gaps, incoherent tunneling coupling, and symmetry of structure between two vertically aligned QDs, can remarkably control the photoexcited carriers transfer properties, and that slightly increasing the ambient temperature around room temperature is beneficial to the transfer performance in this doping DQDs photocell model. Thus, our scheme proves a way to optimized strategies for DQDs photocell.
format Preprint
id arxiv_https___arxiv_org_abs_2402_00895
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Photoexcited carriers transfer properties in a doped double quantum dots photocell
Zhu, Sheng-Nan
Zhao, Shun-Cai
Chen, Lin-Jie
Fang, Qing
Mesoscale and Nanoscale Physics
Identifying the behavior of photoexcited carriers is one method for empirically boosting their transfer efficiencies in doped double quantum dots (DQDs) photocells. The photoexcited carriers transfer qualities were assessed in this study by the output current, power, and output efficiency in the multi-photon absorption process for a doped DQDs photocell, and an optimization technique is theoretically obtained for this proposed photocell model. The results show that some structure parameters caused by doping, such as gaps, incoherent tunneling coupling, and symmetry of structure between two vertically aligned QDs, can remarkably control the photoexcited carriers transfer properties, and that slightly increasing the ambient temperature around room temperature is beneficial to the transfer performance in this doping DQDs photocell model. Thus, our scheme proves a way to optimized strategies for DQDs photocell.
title Photoexcited carriers transfer properties in a doped double quantum dots photocell
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2402.00895