Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
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arXiv
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| Auteurs principaux: | , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866914664579858432 |
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| author | Fernández-Garrido, Sergio Kaganer, Vladimir M. Sabelfeld, Karl K. Gotschke, Tobias Grandal, Javier Calleja, Enrique Geelhaar, Lutz Brandt, Oliver |
| author_facet | Fernández-Garrido, Sergio Kaganer, Vladimir M. Sabelfeld, Karl K. Gotschke, Tobias Grandal, Javier Calleja, Enrique Geelhaar, Lutz Brandt, Oliver |
| contents | We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a decrease in the Ga flux reduces the axial growth rate without any change in the radius. These results are explained by a kinetic growth model that accounts for both the diffusion of Ga adatoms along the side facets towards the nanowire tip and the finite amount of active N available for the growth. The model explains the formation of a new equilibrium nanowire radius after increasing the Ga flux and provides an explanation for two well known but so far not understood experimental facts: the necessity of effectively N-rich conditions for the spontaneous growth of GaN nanowires and the increase in nanowire radius with increasing III/V flux ratios. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_01756 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy Fernández-Garrido, Sergio Kaganer, Vladimir M. Sabelfeld, Karl K. Gotschke, Tobias Grandal, Javier Calleja, Enrique Geelhaar, Lutz Brandt, Oliver Materials Science We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a decrease in the Ga flux reduces the axial growth rate without any change in the radius. These results are explained by a kinetic growth model that accounts for both the diffusion of Ga adatoms along the side facets towards the nanowire tip and the finite amount of active N available for the growth. The model explains the formation of a new equilibrium nanowire radius after increasing the Ga flux and provides an explanation for two well known but so far not understood experimental facts: the necessity of effectively N-rich conditions for the spontaneous growth of GaN nanowires and the increase in nanowire radius with increasing III/V flux ratios. |
| title | Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy |
| topic | Materials Science |
| url | https://arxiv.org/abs/2402.01756 |