Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

Documenti analoghi

• Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity
  di: Fernández-Garrido, Sergio, et al.
  Pubblicazione: (2024)
• High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN
  di: Zettler, J. K., et al.
  Pubblicazione: (2024)
• Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature
  di: Zettler, Johannes K., et al.
  Pubblicazione: (2024)
• Polarity-induced selective area epitaxy of GaN nanowires
  di: Schiaber, Ziani de Souza, et al.
  Pubblicazione: (2024)
• Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy
  di: Fernández-Garrido, Sergio, et al.
  Pubblicazione: (2024)