Magnetic interactions in doped silicene for spintronics

Fuente: arXiv
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Autori principali: Gomes, L. M., da Rosa, A. L.
Natura: Preprint
Pubblicazione: 2024
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author Gomes, L. M.
da Rosa, A. L.
author_facet Gomes, L. M.
da Rosa, A. L.
contents Silicon is a material whose technological application is well established, and obtaining this material in nanostructured form increases its possibility of integration in current technology. Silicene is a natural compatibility with current silicon-based electronics industry. Furthermore, doping is a technique that can be often used to adjust the band gap of silicene and at the same time introduce new functions. Here we investigate Several aspects of silicene doping with chromium, such as dopant solubility limits, site preference for adsorption and doping, and formation of magnetic domains. In this work we carried out investigation on diffusion and doping of chromium atoms on silicene. We use density-functional theory to identify the electronic and magnetic properties of tchromium atoms on monolayer and bilayer silicene. We find that magnetization depends on key parameters such as buckling, interlayer distance and adsorption site.
format Preprint
id arxiv_https___arxiv_org_abs_2402_01880
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Magnetic interactions in doped silicene for spintronics
Gomes, L. M.
da Rosa, A. L.
Materials Science
Silicon is a material whose technological application is well established, and obtaining this material in nanostructured form increases its possibility of integration in current technology. Silicene is a natural compatibility with current silicon-based electronics industry. Furthermore, doping is a technique that can be often used to adjust the band gap of silicene and at the same time introduce new functions. Here we investigate Several aspects of silicene doping with chromium, such as dopant solubility limits, site preference for adsorption and doping, and formation of magnetic domains. In this work we carried out investigation on diffusion and doping of chromium atoms on silicene. We use density-functional theory to identify the electronic and magnetic properties of tchromium atoms on monolayer and bilayer silicene. We find that magnetization depends on key parameters such as buckling, interlayer distance and adsorption site.
title Magnetic interactions in doped silicene for spintronics
topic Materials Science
url https://arxiv.org/abs/2402.01880