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Auteurs principaux: Chiout, Anis, Tempez, Agnès, Carlier, Thomas, Chaigneau, Marc, Cadiz, Fabian, Rowe, Alistair, Zheng, Biyuan, Pan, Anlian, Pala, Marco, Oehler, Fabrice, Ouerghi, Abdelkarim, Chaste, Julien
Format: Preprint
Publié: 2024
Sujets:
Accès en ligne:https://arxiv.org/abs/2402.03061
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_version_ 1866909093666488320
author Chiout, Anis
Tempez, Agnès
Carlier, Thomas
Chaigneau, Marc
Cadiz, Fabian
Rowe, Alistair
Zheng, Biyuan
Pan, Anlian
Pala, Marco
Oehler, Fabrice
Ouerghi, Abdelkarim
Chaste, Julien
author_facet Chiout, Anis
Tempez, Agnès
Carlier, Thomas
Chaigneau, Marc
Cadiz, Fabian
Rowe, Alistair
Zheng, Biyuan
Pan, Anlian
Pala, Marco
Oehler, Fabrice
Ouerghi, Abdelkarim
Chaste, Julien
contents Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with an optical system to perform indentation measurements and tip-enhanced photoluminescence (TEPL), allowing us to extract the local optical response of a suspended monolayer membrane of ternary WSSe at various levels of deformation, up to strains of 10%. The photoluminescence signal is modelled considering the deformation, stress distribution and strain dependence of the WSSe band structure. We observe an additional TEPL signal that exhibits significant variation under strain, with 64 meV per percent of elongation. This peak is linked to the highly strained 2D material lying right underneath the tip. We discuss the amplification of the signal and its relation to the excitonic funnelling effect in a more comprehensive model. We will also compare the diffusion caused by Auger recombination against the radiative excitonic decay. We use TEPL to examine and comprehend the local physics of 2D semi-conducting materials subjected to extreme mechanical strain. Chemical vapour deposition-fabricated 2D ternaries possess high strain resistance, comparable to the benchmark MoS2, and a high Young's modulus of 273 GPa.
format Preprint
id arxiv_https___arxiv_org_abs_2402_03061
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence
Chiout, Anis
Tempez, Agnès
Carlier, Thomas
Chaigneau, Marc
Cadiz, Fabian
Rowe, Alistair
Zheng, Biyuan
Pan, Anlian
Pala, Marco
Oehler, Fabrice
Ouerghi, Abdelkarim
Chaste, Julien
Mesoscale and Nanoscale Physics
Materials Science
Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with an optical system to perform indentation measurements and tip-enhanced photoluminescence (TEPL), allowing us to extract the local optical response of a suspended monolayer membrane of ternary WSSe at various levels of deformation, up to strains of 10%. The photoluminescence signal is modelled considering the deformation, stress distribution and strain dependence of the WSSe band structure. We observe an additional TEPL signal that exhibits significant variation under strain, with 64 meV per percent of elongation. This peak is linked to the highly strained 2D material lying right underneath the tip. We discuss the amplification of the signal and its relation to the excitonic funnelling effect in a more comprehensive model. We will also compare the diffusion caused by Auger recombination against the radiative excitonic decay. We use TEPL to examine and comprehend the local physics of 2D semi-conducting materials subjected to extreme mechanical strain. Chemical vapour deposition-fabricated 2D ternaries possess high strain resistance, comparable to the benchmark MoS2, and a high Young's modulus of 273 GPa.
title High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2402.03061