Balanced Quantum Hall Resistor

Fuente: arXiv
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Bibliographic Details
Main Authors: Fijalkowski, Kajetan M., Liu, Nan, Klement, Martin, Schreyeck, Steffen, Brunner, Karl, Gould, Charles, Molenkamp, Laurens W.
Format: Preprint
Published: 2024
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_version_ 1866909199541207040
author Fijalkowski, Kajetan M.
Liu, Nan
Klement, Martin
Schreyeck, Steffen
Brunner, Karl
Gould, Charles
Molenkamp, Laurens W.
author_facet Fijalkowski, Kajetan M.
Liu, Nan
Klement, Martin
Schreyeck, Steffen
Brunner, Karl
Gould, Charles
Molenkamp, Laurens W.
contents The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external magnetic field, which allows to combine it with the quantum standard of voltage. Here we demonstrate a measurement scheme that increases the robustness of the zero magnetic field quantum anomalous Hall resistor, allowing for higher operational currents. This is achieved by simultaneous current injection into the two disconnected perimeters of a multi-terminal Corbino device to balance the electrochemical potential between the edges, screening the electric field that drives back-scattering through the bulk, and thus improving the stability of the quantization at increased currents. This approach is not only applicable to devices based on the quantum anomalous Hall effect, but more generally can also be applied to existing quantum resistance standards that rely on the integer quantum Hall effect.
format Preprint
id arxiv_https___arxiv_org_abs_2402_04126
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Balanced Quantum Hall Resistor
Fijalkowski, Kajetan M.
Liu, Nan
Klement, Martin
Schreyeck, Steffen
Brunner, Karl
Gould, Charles
Molenkamp, Laurens W.
Mesoscale and Nanoscale Physics
Instrumentation and Detectors
The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external magnetic field, which allows to combine it with the quantum standard of voltage. Here we demonstrate a measurement scheme that increases the robustness of the zero magnetic field quantum anomalous Hall resistor, allowing for higher operational currents. This is achieved by simultaneous current injection into the two disconnected perimeters of a multi-terminal Corbino device to balance the electrochemical potential between the edges, screening the electric field that drives back-scattering through the bulk, and thus improving the stability of the quantization at increased currents. This approach is not only applicable to devices based on the quantum anomalous Hall effect, but more generally can also be applied to existing quantum resistance standards that rely on the integer quantum Hall effect.
title Balanced Quantum Hall Resistor
topic Mesoscale and Nanoscale Physics
Instrumentation and Detectors
url https://arxiv.org/abs/2402.04126