Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation

Fuente: arXiv
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Auteurs principaux: Giacomini, Gabriele, Chen, Wei, D'Amen, Gabriele, Rossi, Enrico, Tricoli, Alessandro
Format: Preprint
Publié: 2024
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author Giacomini, Gabriele
Chen, Wei
D'Amen, Gabriele
Rossi, Enrico
Tricoli, Alessandro
author_facet Giacomini, Gabriele
Chen, Wei
D'Amen, Gabriele
Rossi, Enrico
Tricoli, Alessandro
contents Low-Gain Avalanche Diodes are a type of silicon Avalanche Photo-Diodes originally developed for the fast detection of minimum ionizing particles in high-energy physics experiments. Thanks to their fast timing performance, the Low-Gain Avalanche Diode paradigm enables detectors to accurately measure minimum ionizing particles with a timing resolution of a few tens of picoseconds. Such a performance is due to a thin substrate and the presence of a moderate signal gain. This internal gain of a few tens is enough to compensate for the reduced charge deposition in the thinner substrate and the noise of fast read-out systems. While Low-Gain Avalanche Diodes are optimized for the detection of minimum ionizing particles for high-energy particle detectors, it is critical to study their performance for the detection of different types of particle, such as X-rays, gamma-rays, or alphas. In this paper, we evaluate the gain of three types of Low-Gain Avalanche Diodes: two devices with different geometries and doping profiles fabricated by Brookhaven National Laboratory, and one fabricated by Hamamatsu Photonics with a different process. Since the gain in LGADs depends on the bias voltage applied to the sensor, pulse-height spectra have been acquired for bias voltages spanning from the depletion voltage up to breakdown voltage. The signal-to-noise ratio of the generated signals and the shape of their spectra allow us to probe the underlying physics of the multiplication process.
format Preprint
id arxiv_https___arxiv_org_abs_2402_04132
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation
Giacomini, Gabriele
Chen, Wei
D'Amen, Gabriele
Rossi, Enrico
Tricoli, Alessandro
Instrumentation and Detectors
Low-Gain Avalanche Diodes are a type of silicon Avalanche Photo-Diodes originally developed for the fast detection of minimum ionizing particles in high-energy physics experiments. Thanks to their fast timing performance, the Low-Gain Avalanche Diode paradigm enables detectors to accurately measure minimum ionizing particles with a timing resolution of a few tens of picoseconds. Such a performance is due to a thin substrate and the presence of a moderate signal gain. This internal gain of a few tens is enough to compensate for the reduced charge deposition in the thinner substrate and the noise of fast read-out systems. While Low-Gain Avalanche Diodes are optimized for the detection of minimum ionizing particles for high-energy particle detectors, it is critical to study their performance for the detection of different types of particle, such as X-rays, gamma-rays, or alphas. In this paper, we evaluate the gain of three types of Low-Gain Avalanche Diodes: two devices with different geometries and doping profiles fabricated by Brookhaven National Laboratory, and one fabricated by Hamamatsu Photonics with a different process. Since the gain in LGADs depends on the bias voltage applied to the sensor, pulse-height spectra have been acquired for bias voltages spanning from the depletion voltage up to breakdown voltage. The signal-to-noise ratio of the generated signals and the shape of their spectra allow us to probe the underlying physics of the multiplication process.
title Spectroscopic performance of Low-Gain Avalanche Diodes for different types of radiation
topic Instrumentation and Detectors
url https://arxiv.org/abs/2402.04132