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Main Authors: Lee, Seungjun, Kim, Hyeong-Ryul, Jiang, Wei, Kwon, Young-Kyun, Low, Tony
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2402.04387
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author Lee, Seungjun
Kim, Hyeong-Ryul
Jiang, Wei
Kwon, Young-Kyun
Low, Tony
author_facet Lee, Seungjun
Kim, Hyeong-Ryul
Jiang, Wei
Kwon, Young-Kyun
Low, Tony
contents The piezoelectricity of group IV monochalcogenides (MXs, with M = Ge, Sn and X = S, Se) has attracted much attention due to their substantially higher piezoelectric coefficients compared to other 2D materials. However, with increasing layer number, their piezoelectricity rapidly disappears due to the antiferroelectric stacking order, severely limiting their practical applications. Using first-principles calculations, we investigated the piezoelectricity of MXs with the ferroelectric AA stacking configuration, which has recently been stabilized in experiments. We found that AA-stacked MXs have a ferroelectric ground state with the smallest lattice constant among other stacking configurations, resulting in a giant piezoelectric coefficient, which is the first demonstration of a strategy where the piezoelectric coefficients can increase with the number of layers. This can be attributed to a strong negative correlation between the lattice constant along the armchair direction and the piezoelectric coefficient, and spontaneous compressive strain stabilized in ferroelectric AA stacking configuration.
format Preprint
id arxiv_https___arxiv_org_abs_2402_04387
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Giant piezoelectricity in group IV monochalcogenides with ferroelectric AA layer stacking
Lee, Seungjun
Kim, Hyeong-Ryul
Jiang, Wei
Kwon, Young-Kyun
Low, Tony
Materials Science
Computational Physics
The piezoelectricity of group IV monochalcogenides (MXs, with M = Ge, Sn and X = S, Se) has attracted much attention due to their substantially higher piezoelectric coefficients compared to other 2D materials. However, with increasing layer number, their piezoelectricity rapidly disappears due to the antiferroelectric stacking order, severely limiting their practical applications. Using first-principles calculations, we investigated the piezoelectricity of MXs with the ferroelectric AA stacking configuration, which has recently been stabilized in experiments. We found that AA-stacked MXs have a ferroelectric ground state with the smallest lattice constant among other stacking configurations, resulting in a giant piezoelectric coefficient, which is the first demonstration of a strategy where the piezoelectric coefficients can increase with the number of layers. This can be attributed to a strong negative correlation between the lattice constant along the armchair direction and the piezoelectric coefficient, and spontaneous compressive strain stabilized in ferroelectric AA stacking configuration.
title Giant piezoelectricity in group IV monochalcogenides with ferroelectric AA layer stacking
topic Materials Science
Computational Physics
url https://arxiv.org/abs/2402.04387