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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2402.06553 |
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| _version_ | 1866913582741979136 |
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| author | Lourens, Florian Rogalla, Detlef Suhr, Ellen Ludwig, Alfred |
| author_facet | Lourens, Florian Rogalla, Detlef Suhr, Ellen Ludwig, Alfred |
| contents | A Li-Al-O thin film materials library, deposited by inert magnetron sputtering and post-deposition annealing in O2 atmosphere, was used to study the effects of different annealing temperatures (300 to 850°C) and durations (1 min to 7 h) on crystallinity and composition of the films. XPS depth profiling revealed inhomogeneous compositional depth profiles with Li contents increased toward the film surface and Al contents toward the film-substrate interface. These depth profiles were confirmed by a combination of RBS and D-NRA. At annealing temperatures of 550°C and higher, Li reacted with the Si substrate. At the same time, temperatures of 550°C and higher enabled the formation of crystalline LiAlO2, whereas at lower temperatures, no crystalline Li-Al-O phases were detected with XRD. In contrast to conventional annealing in a tube furnace (3 to 7 h durations), rapid thermal annealing with fast heating/cooling rates of 10°C/min and durations of 1 to 10 min resulted in homogeneous depth profiles, while also leading to crystalline LiAlO2. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_06553 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | On the influence of annealing on the compositional and crystallographic properties of sputtered Li-Al-O thin films Lourens, Florian Rogalla, Detlef Suhr, Ellen Ludwig, Alfred Materials Science A Li-Al-O thin film materials library, deposited by inert magnetron sputtering and post-deposition annealing in O2 atmosphere, was used to study the effects of different annealing temperatures (300 to 850°C) and durations (1 min to 7 h) on crystallinity and composition of the films. XPS depth profiling revealed inhomogeneous compositional depth profiles with Li contents increased toward the film surface and Al contents toward the film-substrate interface. These depth profiles were confirmed by a combination of RBS and D-NRA. At annealing temperatures of 550°C and higher, Li reacted with the Si substrate. At the same time, temperatures of 550°C and higher enabled the formation of crystalline LiAlO2, whereas at lower temperatures, no crystalline Li-Al-O phases were detected with XRD. In contrast to conventional annealing in a tube furnace (3 to 7 h durations), rapid thermal annealing with fast heating/cooling rates of 10°C/min and durations of 1 to 10 min resulted in homogeneous depth profiles, while also leading to crystalline LiAlO2. |
| title | On the influence of annealing on the compositional and crystallographic properties of sputtered Li-Al-O thin films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2402.06553 |