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Main Authors: Iglesias, Jose Manuel, Pascual, Elena, Martin, Maria J., Rengel, Raul
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2402.07850
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author Iglesias, Jose Manuel
Pascual, Elena
Martin, Maria J.
Rengel, Raul
author_facet Iglesias, Jose Manuel
Pascual, Elena
Martin, Maria J.
Rengel, Raul
contents In this paper we explore the capabilities of MoS2 and WS2 2D monolayers to produce radiation in the terahertz range by generation of high-order harmonics. This phenomenon, which is a result of the non-linear response of the electronic carrier population to the applied electric field, is studied by using a particle ensemble stochastic simulation approach based on the Monte Carlo method. The power of the produced harmonic signals is studied against the electric field amplitude, the external temperature, and the frequency of the excitation. Additionally, the stochastic nature of the simulation tool enables to discern the purely discrete harmonic signal from the background spectral noise that comes from the intrinsic carrier velocity fluctuations in the diffusive regime, permitting to set bandwidth thresholds for harmonic extraction. It was found that both TMDs showed similar thresholds bandwidths when compared to III-V semiconductor at low temperatures, while WS2 would be by far a better choice, over MoS2, for exploitation of the 7th and 9th harmonic generation.
format Preprint
id arxiv_https___arxiv_org_abs_2402_07850
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle High-order harmonic generation in 2D Transition Metal Disulphides
Iglesias, Jose Manuel
Pascual, Elena
Martin, Maria J.
Rengel, Raul
Applied Physics
Mesoscale and Nanoscale Physics
In this paper we explore the capabilities of MoS2 and WS2 2D monolayers to produce radiation in the terahertz range by generation of high-order harmonics. This phenomenon, which is a result of the non-linear response of the electronic carrier population to the applied electric field, is studied by using a particle ensemble stochastic simulation approach based on the Monte Carlo method. The power of the produced harmonic signals is studied against the electric field amplitude, the external temperature, and the frequency of the excitation. Additionally, the stochastic nature of the simulation tool enables to discern the purely discrete harmonic signal from the background spectral noise that comes from the intrinsic carrier velocity fluctuations in the diffusive regime, permitting to set bandwidth thresholds for harmonic extraction. It was found that both TMDs showed similar thresholds bandwidths when compared to III-V semiconductor at low temperatures, while WS2 would be by far a better choice, over MoS2, for exploitation of the 7th and 9th harmonic generation.
title High-order harmonic generation in 2D Transition Metal Disulphides
topic Applied Physics
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2402.07850