Copertina

AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators

Fuente: arXiv

Salvato in:

Dettagli Bibliografici
Autori principali:	Buatip, N., Auzelle, T., John, P., Rauwerdink, S., Sohdi, M., Saluan, M., Fernandez, B., Monroy, E., Mornex, D., Bowen, C. R., Songmuang, R.
Natura:	Preprint
Pubblicazione:	2024
Soggetti:	Applied Physics Materials Science
Accesso online:	Acceder al recurso
Tags:	Aggiungi Tag Nessun Tag, puoi essere il primo ad aggiungerne!!

Documenti analoghi

Molecular Beam Epitaxy of Al$\mathrm{_{1-x}}$Sc$\mathrm{_{x}}$N Nanowires: Towards Group-III Nitride Piezoelectric Nanogenerators with Enhanced Response
di: Notarangelo, Adriano, et al.
Pubblicazione: (2026)

Single-Crystal AlN Wafer-Based Bulk Acoustic Resonators for Piezoelectric Power Conversion
di: Yao, Ziqian, et al.
Pubblicazione: (2026)

A Liquid Density Sensor Based On AlN Piezoelectric Micromachined Ultrasonic Transmitter Insensitive to Liquid Viscosity
di: Fu, Xuecong, et al.
Pubblicazione: (2026)

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor
di: Mudiyanselage, Dinusha Herath, et al.
Pubblicazione: (2024)

Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
di: Chen, Yu-Hsin, et al.
Pubblicazione: (2025)

Temperature Dependent Characteristics of Quasi-vertical AlN Schottky Diodes on Bulk AlN Substrate
di: Hamid, Md Abdul, et al.
Pubblicazione: (2026)

Tracking the creation of single photon emitters in AlN by implantation and annealing
di: Yağcı, H. B., et al.
Pubblicazione: (2025)

AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics
di: Gündogdu, Sinan, et al.
Pubblicazione: (2023)

Experimental observation of ballistic to diffusive transition in AlN thin films
di: Hoque, Md Shafkat Bin, et al.
Pubblicazione: (2024)

XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
di: Kim, Eungkyun, et al.
Pubblicazione: (2025)

Self-injection locking dynamics with Raman actions in AlN microresonators
di: Ding, Yulei, et al.
Pubblicazione: (2025)

Metalorganic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures
di: Vangipuram, Vijay Gopal Thirupakuzi, et al.
Pubblicazione: (2025)

Wurtzite AlScN/AlN Superlattice Ferroelectrics Enable Endurance Beyond 1010 Cycles
di: Wang, Ruiqing, et al.
Pubblicazione: (2025)

Development of TiN/AlN-based superconducting qubit components
di: Schoof, Benedikt, et al.
Pubblicazione: (2024)

Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE
di: Pampili, Pietro, et al.
Pubblicazione: (2024)

Thin Film AlN Microbolometer for Very Long-Wave Infrared Detection
di: Tallavajhula, Vivek, et al.
Pubblicazione: (2026)

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
di: Gačević, Ž., et al.
Pubblicazione: (2024)

Cryogenic Loss Limits in Microwave Epitaxial AlN Acoustic Resonators
di: Gulupalli, Hemant, et al.
Pubblicazione: (2026)

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates
di: Cardinael, Pieter, et al.
Pubblicazione: (2024)

Far-UVC Field Emission Device at 226 nm and its Sub-Nanometer thick GaN/AlN Quantum Well Anode
di: Boiko, D. L., et al.
Pubblicazione: (2025)

Improved operating voltage in InGaN-capped AlGaN-based DUV LEDs on bulk AlN substrates
di: Huang, H-W S., et al.
Pubblicazione: (2025)

ZnO@C/PVDF Electrospun Membrane as Piezoelectric Nanogenerator for Wearable Applications
di: Bagla, Anshika, et al.
Pubblicazione: (2025)

Si/AlN p-n heterojunction interfaced with ultrathin SiO2
di: Abbasi, Haris Naeem, et al.
Pubblicazione: (2024)

A Promising Ohmic Contacts Approach for High-Al AlxGa1-xN (x>0.6) Channel HEMTs with AlN/GaN Digital Alloy Channel
di: Jamil, Tariq, et al.
Pubblicazione: (2026)

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
di: Bhuiyan, A F M Anhar Uddin, et al.
Pubblicazione: (2022)

High-efficiency, cryogenic-compatible grating couplers on an AlN-on-sapphire platform through bottom-side coupling
di: Zhou, Yiyu, et al.
Pubblicazione: (2024)

Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
di: Mukhopadhyay, Swarnav, et al.
Pubblicazione: (2023)

Piezoelectric microresonators for sensitive spin detection
di: Kline, Cecile Skoryna, et al.
Pubblicazione: (2024)

Nanomechanical crystalline AlN resonators with high quality factors for quantum optoelectromechanics
di: Ciers, Anastasiia, et al.
Pubblicazione: (2024)

Rock-salt ScN(113) layers grown on AlN$(11\bar{2}2)$ by plasma-assisted molecular beam epitaxy
di: Dinh, Duc V., et al.
Pubblicazione: (2025)

Cryogenic enhancement of phononic four-wave mixing in AlScN/SiC
di: Behera, A. K., et al.
Pubblicazione: (2026)

Oxidation behavior of SiC‐AlN ceramics exposed to dry oxygen and water oxygen environments at 1100–1300°C
di: Xiaofan Sun, et al.
Pubblicazione: (2024)

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
di: Matys, Maciej, et al.
Pubblicazione: (2024)

Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor
di: Mukhopadhyay, Swarnav, et al.
Pubblicazione: (2024)

Nanoscale Engineering of Wurtzite Ferroelectrics: Unveiling Phase Transition and Ferroelectric Switching in ScAlN Nanowires
di: Wang, Ding, et al.
Pubblicazione: (2024)

Electron Microscopy Study of Core-Shell Nanowire Bending and Twisting
di: McDermott, Spencer, et al.
Pubblicazione: (2025)

CMOS-Compatible, AlScN-Based Integrated Electro-Optic Modulator
di: Yoshioka, Valerie, et al.
Pubblicazione: (2024)

Low-Temperature Sputtering and Polarity Determination of Vertically Aligned ZnO Nanocolumns
di: Hamzi, A., et al.
Pubblicazione: (2026)

Position-Dependent Calibration and Frequency Stability in On-Axis Optical Transduction of Vertical InP Nanowire Resonators
di: West, Robert G., et al.
Pubblicazione: (2026)

Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy
di: Kang, Jingxuan, et al.
Pubblicazione: (2024)