Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs
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arXiv
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| Auteurs principaux: | , , , , |
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| Format: | Preprint |
| Publié: |
2024
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| _version_ | 1866913235888766976 |
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| author | Atamuratov, A. E. Jabbarova, B. O. Xaitbayev, E. Sh. Rajapov, D. R. Khalilloev, M. M. |
| author_facet | Atamuratov, A. E. Jabbarova, B. O. Xaitbayev, E. Sh. Rajapov, D. R. Khalilloev, M. M. |
| contents | In this work, the self-heating effect in inversion mode FinFET and Junctionless (accumulation mode) FinFET is compared and the influence of the different electrical and geometric parameters on the self-heating effect are considered. It is shown, that the lattice temperature in the channel center is higher in junctionless (JL), accumulation mode FinFET than in inversion mode FinFET with the same parameters. The difference in the temperature is explained by the difference in the structure, particularly by the difference in the doping level of the channel for these transistors. The dependence of the self-heating effect on the doping depth and doping profile of the source and drain areas along the channel were considered. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_10858 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs Atamuratov, A. E. Jabbarova, B. O. Xaitbayev, E. Sh. Rajapov, D. R. Khalilloev, M. M. Applied Physics Mesoscale and Nanoscale Physics In this work, the self-heating effect in inversion mode FinFET and Junctionless (accumulation mode) FinFET is compared and the influence of the different electrical and geometric parameters on the self-heating effect are considered. It is shown, that the lattice temperature in the channel center is higher in junctionless (JL), accumulation mode FinFET than in inversion mode FinFET with the same parameters. The difference in the temperature is explained by the difference in the structure, particularly by the difference in the doping level of the channel for these transistors. The dependence of the self-heating effect on the doping depth and doping profile of the source and drain areas along the channel were considered. |
| title | Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs |
| topic | Applied Physics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2402.10858 |