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| Main Authors: | , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2402.10917 |
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| _version_ | 1866909111765958656 |
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| author | Torrens, Gabriel de Paul, Ivan Alorda, Bartomeu Bota, Sebastia Segura, Jaume |
| author_facet | Torrens, Gabriel de Paul, Ivan Alorda, Bartomeu Bota, Sebastia Segura, Jaume |
| contents | Experimental results from a 65 nm CMOS commercial technology SRAM test chip reveal a linear correlation between a new electrical parameter -- the word-line voltage margin (VWLVM) -- and the measured circuit alpha-SER. Additional experiments show that no other memory cell electrical robustness-related parameters exhibit such correlation. The technique proposed is based on correlating the VWLVM to the SER measured on a small number of circuit samples to determine the correlation parameters. Then, the remaining non-irradiated circuits SER is determined from electrical measurements (VWLVM) without the need of additional radiation experiments. This method represents a significant improvement in time and cost, while simplifying the SER-determination methods since most of the circuits do not require irradiation. The technique involves a minor memory design modification that does not degrade circuit performance, while circuit area increase is negligible. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_10917 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | SRAM Alpha-SER Estimation From Word-Line Voltage Margin Measurements: Design Architecture and Experimental Results Torrens, Gabriel de Paul, Ivan Alorda, Bartomeu Bota, Sebastia Segura, Jaume Hardware Architecture Experimental results from a 65 nm CMOS commercial technology SRAM test chip reveal a linear correlation between a new electrical parameter -- the word-line voltage margin (VWLVM) -- and the measured circuit alpha-SER. Additional experiments show that no other memory cell electrical robustness-related parameters exhibit such correlation. The technique proposed is based on correlating the VWLVM to the SER measured on a small number of circuit samples to determine the correlation parameters. Then, the remaining non-irradiated circuits SER is determined from electrical measurements (VWLVM) without the need of additional radiation experiments. This method represents a significant improvement in time and cost, while simplifying the SER-determination methods since most of the circuits do not require irradiation. The technique involves a minor memory design modification that does not degrade circuit performance, while circuit area increase is negligible. |
| title | SRAM Alpha-SER Estimation From Word-Line Voltage Margin Measurements: Design Architecture and Experimental Results |
| topic | Hardware Architecture |
| url | https://arxiv.org/abs/2402.10917 |