Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering
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arXiv
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866909110759325696 |
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| author | Pampillón, María Ángela Feijoo, Pedro Carlos Andrés, Enrique San Lucía, María Luisa Toledano-Luque, María |
| author_facet | Pampillón, María Ángela Feijoo, Pedro Carlos Andrés, Enrique San Lucía, María Luisa Toledano-Luque, María |
| contents | Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 $^\circ$C. At an oxidation temperature of 500 $^\circ$C the films show a transition from monoclinic structure to a mixture of monoclinic and cubic. Regrowth of interfacial SiO$_x$ is observed as temperature is increased, up to 1.6 nm for 750 $^\circ$C. This temperature yields the lowest interface trap density, 4e10 eV$^{-1}$ cm$^{-2}$, but the effective permittivity of the resulting dielectric is only 7.4. The reason of this low value is found on the oxidation mechanism, which yields a surface with located bumps. These bumps increase the average thickness, thus reducing the capacitance and therefore the calculated permittivity. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2402_10925 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering Pampillón, María Ángela Feijoo, Pedro Carlos Andrés, Enrique San Lucía, María Luisa Toledano-Luque, María Materials Science Applied Physics Thin gadolinium metallic layers were deposited by high-pressure sputtering in pure Ar atmosphere. Subsequently, in situ thermal oxidation was performed at temperatures ranging from 150 to 750 $^\circ$C. At an oxidation temperature of 500 $^\circ$C the films show a transition from monoclinic structure to a mixture of monoclinic and cubic. Regrowth of interfacial SiO$_x$ is observed as temperature is increased, up to 1.6 nm for 750 $^\circ$C. This temperature yields the lowest interface trap density, 4e10 eV$^{-1}$ cm$^{-2}$, but the effective permittivity of the resulting dielectric is only 7.4. The reason of this low value is found on the oxidation mechanism, which yields a surface with located bumps. These bumps increase the average thickness, thus reducing the capacitance and therefore the calculated permittivity. |
| title | Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2402.10925 |