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Main Authors: Hsu, Tzu-Hsuan, Campbell, Joshua, Kramer, Jack, Cho, Sinwoo, Lee, Zhi-Qiang, Li, Ming-Huang, Lu, Ruochen
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2402.11508
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author Hsu, Tzu-Hsuan
Campbell, Joshua
Kramer, Jack
Cho, Sinwoo
Lee, Zhi-Qiang
Li, Ming-Huang
Lu, Ruochen
author_facet Hsu, Tzu-Hsuan
Campbell, Joshua
Kramer, Jack
Cho, Sinwoo
Lee, Zhi-Qiang
Li, Ming-Huang
Lu, Ruochen
contents In this work, we investigate the frequency scaling of shear-horizontal (S.H.) surface acoustic wave (SAW) resonators based on a lithium niobate on insulator (LNOI) substrate into the centimeter bands for 6G wireless systems. Prototyped resonators with wavelengths ranging between 240 nm and 400 nm were fabricated, and the experimental results exhibit a successful frequency scaling between 9.05 and 13.37 GHz. However, a noticeable performance degradation can be observed as the resonance frequency (fs) scales. Such an effect is expected to be caused by non-ideal helec/λ for smaller λ devices. The optimized LNOI SH-SAW with a λ of 400 nm exhibits a fs of 9.05 GHz, a keff2 of 15%, Qmax of 213 and a FoM of 32, which indicates a successful implementation for device targeting centimeter bands.
format Preprint
id arxiv_https___arxiv_org_abs_2402_11508
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Thin-film Lithium Niobate on Insulator Surface Acoustic Wave Devices for 6G Centimeter Bands
Hsu, Tzu-Hsuan
Campbell, Joshua
Kramer, Jack
Cho, Sinwoo
Lee, Zhi-Qiang
Li, Ming-Huang
Lu, Ruochen
Signal Processing
In this work, we investigate the frequency scaling of shear-horizontal (S.H.) surface acoustic wave (SAW) resonators based on a lithium niobate on insulator (LNOI) substrate into the centimeter bands for 6G wireless systems. Prototyped resonators with wavelengths ranging between 240 nm and 400 nm were fabricated, and the experimental results exhibit a successful frequency scaling between 9.05 and 13.37 GHz. However, a noticeable performance degradation can be observed as the resonance frequency (fs) scales. Such an effect is expected to be caused by non-ideal helec/λ for smaller λ devices. The optimized LNOI SH-SAW with a λ of 400 nm exhibits a fs of 9.05 GHz, a keff2 of 15%, Qmax of 213 and a FoM of 32, which indicates a successful implementation for device targeting centimeter bands.
title Thin-film Lithium Niobate on Insulator Surface Acoustic Wave Devices for 6G Centimeter Bands
topic Signal Processing
url https://arxiv.org/abs/2402.11508