Epitaxial rare-earth doped complex oxide thin films for infrared applications

Fuente: arXiv
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Main Authors: Surendran, Mythili, Rollag, Joshua, Stevens, Christopher E., Fu, Ching-Tai, Kumarasubramanian, Harish, Wang, Zhe, Schlom, Darrell G., Gibson, Ricky, Hendrickson, Joshua R., Ravichandran, Jayakanth
Format: Preprint
Published: 2024
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author Surendran, Mythili
Rollag, Joshua
Stevens, Christopher E.
Fu, Ching-Tai
Kumarasubramanian, Harish
Wang, Zhe
Schlom, Darrell G.
Gibson, Ricky
Hendrickson, Joshua R.
Ravichandran, Jayakanth
author_facet Surendran, Mythili
Rollag, Joshua
Stevens, Christopher E.
Fu, Ching-Tai
Kumarasubramanian, Harish
Wang, Zhe
Schlom, Darrell G.
Gibson, Ricky
Hendrickson, Joshua R.
Ravichandran, Jayakanth
contents Rare earth dopants are one of the most extensively studied optical emission centers for a broad range of applications such as laser optoelectronics, sensing, lighting, and quantum information technologies due to their narrow optical linewidth and exceptional coherence properties. Epitaxial doped oxide thin films can serve as a promising and controlled host to investigate rare-earth dopants suitable for scalable quantum memories, on-chip lasers and amplifiers. Here, we report high-quality epitaxial thin films of Tm-doped CaZrO$_3$ grown by pulsed laser deposition for infrared optoelectronic and quantum memory applications. We perform extensive structural and chemical characterization to probe the crystallinity of the films and the doping behavior. Low temperature photoluminescence measurements show sharp radiative transitions in the short-wave infrared range of 1.75 - 2 μm.
format Preprint
id arxiv_https___arxiv_org_abs_2402_12358
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Epitaxial rare-earth doped complex oxide thin films for infrared applications
Surendran, Mythili
Rollag, Joshua
Stevens, Christopher E.
Fu, Ching-Tai
Kumarasubramanian, Harish
Wang, Zhe
Schlom, Darrell G.
Gibson, Ricky
Hendrickson, Joshua R.
Ravichandran, Jayakanth
Optics
Materials Science
Rare earth dopants are one of the most extensively studied optical emission centers for a broad range of applications such as laser optoelectronics, sensing, lighting, and quantum information technologies due to their narrow optical linewidth and exceptional coherence properties. Epitaxial doped oxide thin films can serve as a promising and controlled host to investigate rare-earth dopants suitable for scalable quantum memories, on-chip lasers and amplifiers. Here, we report high-quality epitaxial thin films of Tm-doped CaZrO$_3$ grown by pulsed laser deposition for infrared optoelectronic and quantum memory applications. We perform extensive structural and chemical characterization to probe the crystallinity of the films and the doping behavior. Low temperature photoluminescence measurements show sharp radiative transitions in the short-wave infrared range of 1.75 - 2 μm.
title Epitaxial rare-earth doped complex oxide thin films for infrared applications
topic Optics
Materials Science
url https://arxiv.org/abs/2402.12358