Rare-earth doped yttrium silicate (Y2SiO5) thin films grown by chemical vapour deposition for quantum technologies

Fuente: arXiv
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Autori principali: Al-Hunaishi, Suma, Blin, Anna, Harada, Nao, Perrin, Pauline, Goldner, Philippe, Serrano, Diana, Tallaire, Alexandre
Natura: Preprint
Pubblicazione: 2024
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author Al-Hunaishi, Suma
Blin, Anna
Harada, Nao
Perrin, Pauline
Goldner, Philippe
Serrano, Diana
Tallaire, Alexandre
author_facet Al-Hunaishi, Suma
Blin, Anna
Harada, Nao
Perrin, Pauline
Goldner, Philippe
Serrano, Diana
Tallaire, Alexandre
contents Yttrium orthosilicate (Y2SiO5 - YSO) is one of the most promising crystals to host rare-earth (RE) ions for quantum technologies applications. In this matrix, they indeed exhibit narrow optical and spin linewidths that can be exploited to develop quantum memories or quantum information processing capabilities. In this paper, we propose a new method to grow RE doped silicate thin films on silicon wafers based on direct liquid injection chemical vapour deposition (DLI-CVD). We optimize the deposition and annealing conditions to achieve formation of the high temperature X2-YSO phase. The phase purity and crystalline quality of the films are assessed by evaluating the optical properties of Eu3+ ions embedded in this oxide matrix. In view of the results, we discuss the possible phase formation mechanisms, and the potential of this new wafer-compatible form of YSO for quantum technologies applications.
format Preprint
id arxiv_https___arxiv_org_abs_2402_14445
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Rare-earth doped yttrium silicate (Y2SiO5) thin films grown by chemical vapour deposition for quantum technologies
Al-Hunaishi, Suma
Blin, Anna
Harada, Nao
Perrin, Pauline
Goldner, Philippe
Serrano, Diana
Tallaire, Alexandre
Optics
Yttrium orthosilicate (Y2SiO5 - YSO) is one of the most promising crystals to host rare-earth (RE) ions for quantum technologies applications. In this matrix, they indeed exhibit narrow optical and spin linewidths that can be exploited to develop quantum memories or quantum information processing capabilities. In this paper, we propose a new method to grow RE doped silicate thin films on silicon wafers based on direct liquid injection chemical vapour deposition (DLI-CVD). We optimize the deposition and annealing conditions to achieve formation of the high temperature X2-YSO phase. The phase purity and crystalline quality of the films are assessed by evaluating the optical properties of Eu3+ ions embedded in this oxide matrix. In view of the results, we discuss the possible phase formation mechanisms, and the potential of this new wafer-compatible form of YSO for quantum technologies applications.
title Rare-earth doped yttrium silicate (Y2SiO5) thin films grown by chemical vapour deposition for quantum technologies
topic Optics
url https://arxiv.org/abs/2402.14445