Voltage tunable sign inversion of magnetoresistance in van der Waals Fe3GeTe2/MoSe2/Fe3GeTe2 tunnel junctions

Fuente: arXiv

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Bibliographic Details
Main Authors:	Zhu, Shouguo, Lin, Hailong, Zhu, Wenkai, Li, Weihao, Zhang, Jing, Wang, Kaiyou
Format:	Preprint
Published:	2024
Subjects:	Applied Physics Other Condensed Matter
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2402.14510