Simulation study of short channel effects in junctionless SOI MOSFETS
Fuente:
arXiv
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| Format: | Preprint |
| Publié: |
2024
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| _version_ | 1866916135350304768 |
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| author | Khalilloev, Mahkam |
| author_facet | Khalilloev, Mahkam |
| contents | In this work influence of gate extension, channel doping level, and channel thickness to short channel effects- DIBL effect and subthreshold swing, SS for the planar and vertical junctionless field effect transistors is compared. It is shown in the considered range of doping level and channel thickness the DIBL effect is less for junctionless vertical field effect transistors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_14900 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Simulation study of short channel effects in junctionless SOI MOSFETS Khalilloev, Mahkam Applied Physics Mesoscale and Nanoscale Physics In this work influence of gate extension, channel doping level, and channel thickness to short channel effects- DIBL effect and subthreshold swing, SS for the planar and vertical junctionless field effect transistors is compared. It is shown in the considered range of doping level and channel thickness the DIBL effect is less for junctionless vertical field effect transistors. |
| title | Simulation study of short channel effects in junctionless SOI MOSFETS |
| topic | Applied Physics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2402.14900 |