The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET
Fuente:
arXiv
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| Autori principali: | , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866911782817234944 |
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| author | Khalilloev, M. M. Jabbarova, B. O. Nasirov, A. A. |
| author_facet | Khalilloev, M. M. Jabbarova, B. O. Nasirov, A. A. |
| contents | The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator technology has been numerically simulated. It is established that the RTN amplitude in the subthreshold region of gate voltages for a FinFET with a trapezoidal cross-section of the channel is significantly lower than that for the transistor with a rectangular cross-section of a channel. In addition, under the same conditions, the RTN amplitude at the threshold gate voltage in a junctionless FinFET is significantly lower than that in planar fully depleted and in usual FinFET. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_15176 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET Khalilloev, M. M. Jabbarova, B. O. Nasirov, A. A. Applied Physics Mesoscale and Nanoscale Physics The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator technology has been numerically simulated. It is established that the RTN amplitude in the subthreshold region of gate voltages for a FinFET with a trapezoidal cross-section of the channel is significantly lower than that for the transistor with a rectangular cross-section of a channel. In addition, under the same conditions, the RTN amplitude at the threshold gate voltage in a junctionless FinFET is significantly lower than that in planar fully depleted and in usual FinFET. |
| title | The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET |
| topic | Applied Physics Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2402.15176 |