Room Temperature Spin Filtering and Quantum Transport with Transition Metal-Doped Silicon Quantum Dot
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arXiv
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| Main Authors: | , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866909121565949952 |
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| author | Arora, Hemant Samanta, Arup |
| author_facet | Arora, Hemant Samanta, Arup |
| contents | Spin filtering is a fundamental operation in spintronics, enabling the generation and detection of spin-polarized carriers. Here, we proposed and theoretically demonstrated that a 3d transition metal (TM) doped silicon quantum dot (SiQD) is a suitable candidate for spin filter device at room temperature. Using density functional theory (DFT), we investigate the structure, electronic properties, and magnetic behavior of TM-SiQD. Our calculations demonstrate that Mn-doped SiQD exhibits the highest stability. The designed spin-filter device using Mn-doped SiQD shows a spin-filtering efficiency of 99.9% at 300K electrode temperature along with very high conductance. This remarkable efficiency positions it as a promising candidate for room-temperature spintronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_17461 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Room Temperature Spin Filtering and Quantum Transport with Transition Metal-Doped Silicon Quantum Dot Arora, Hemant Samanta, Arup Mesoscale and Nanoscale Physics Spin filtering is a fundamental operation in spintronics, enabling the generation and detection of spin-polarized carriers. Here, we proposed and theoretically demonstrated that a 3d transition metal (TM) doped silicon quantum dot (SiQD) is a suitable candidate for spin filter device at room temperature. Using density functional theory (DFT), we investigate the structure, electronic properties, and magnetic behavior of TM-SiQD. Our calculations demonstrate that Mn-doped SiQD exhibits the highest stability. The designed spin-filter device using Mn-doped SiQD shows a spin-filtering efficiency of 99.9% at 300K electrode temperature along with very high conductance. This remarkable efficiency positions it as a promising candidate for room-temperature spintronic devices. |
| title | Room Temperature Spin Filtering and Quantum Transport with Transition Metal-Doped Silicon Quantum Dot |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2402.17461 |