Valley relaxation in a single-electron bilayer graphene quantum dot
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arXiv
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866913246653448192 |
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| author | Wang, Lin Burkard, Guido |
| author_facet | Wang, Lin Burkard, Guido |
| contents | We investigate the valley relaxation due to intervalley coupling in a single-electron bilayer graphene quantum dot. The valley relaxation is assisted by both the emission of acoustic phonons via the deformation potential and bond-length change mechanisms and $1/f$ charge noise. In the perpendicular magnetic-field dependence of the valley relaxation time $T_1$, we predict a monotonic decrease of $T_1$ at higher fields due to electron-phonon coupling, which is in good agreement with recent experiments by Banszerus et al. We find that the dominant valley relaxation channel in the high-field regime is the electron-phonon coupling via the deformation potential. At lower fields, we predict that a peak in $T_1$ can arise from the competition between $1/f$ charge noise and electron-phonon scattering due to bond-length change. We also find that the interlayer hopping $γ_3$ opens a valley relaxation channel for electric charge noise for rotationally symmetric quantum dots in bilayer graphene. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_18328 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Valley relaxation in a single-electron bilayer graphene quantum dot Wang, Lin Burkard, Guido Mesoscale and Nanoscale Physics Quantum Physics We investigate the valley relaxation due to intervalley coupling in a single-electron bilayer graphene quantum dot. The valley relaxation is assisted by both the emission of acoustic phonons via the deformation potential and bond-length change mechanisms and $1/f$ charge noise. In the perpendicular magnetic-field dependence of the valley relaxation time $T_1$, we predict a monotonic decrease of $T_1$ at higher fields due to electron-phonon coupling, which is in good agreement with recent experiments by Banszerus et al. We find that the dominant valley relaxation channel in the high-field regime is the electron-phonon coupling via the deformation potential. At lower fields, we predict that a peak in $T_1$ can arise from the competition between $1/f$ charge noise and electron-phonon scattering due to bond-length change. We also find that the interlayer hopping $γ_3$ opens a valley relaxation channel for electric charge noise for rotationally symmetric quantum dots in bilayer graphene. |
| title | Valley relaxation in a single-electron bilayer graphene quantum dot |
| topic | Mesoscale and Nanoscale Physics Quantum Physics |
| url | https://arxiv.org/abs/2402.18328 |