Effect of a perpendicular magnetic field on bilayer graphene under dual gating
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arXiv
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| Format: | Preprint |
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2024
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| author | Saley, Mouhamadou Hassane Mouhafid, Abderrahim El Jellal, Ahmed |
| author_facet | Saley, Mouhamadou Hassane Mouhafid, Abderrahim El Jellal, Ahmed |
| contents | By studying the impact of a perpendicular magnetic field $B$ on AB-bilayer graphene (AB-BLG) under dual gating, we yield several key findings for the ballistic transport of gate $U_\infty$. Firstly, we discover that the presence of $B$ leads to a decrease in transmission. At a high value of $B$, we notice the occurrence of anti-Klein tunneling over a significant area. Secondly, in contrast to the results reported in the literature, where high peaks were found with an increasing in-plane pseudomagnetic field applied to AB-BLG, we find a decrease in conductivity as $B$ increases. However, it is worth noting that in both cases, the number of oscillations decreases compared to the result in the study where no magnetic field was present $(B = 0)$. Thirdly, at the neutrality point, we demonstrate that the conductivity decreases and eventually reaches zero for a high value of $B$, which contrasts with the result that the conductivity remains unchanged regardless of the value taken by the in-plane field. Finally, we consider the diffusive transport with gate $U_\infty = 0.2 γ_1$ and observe two scenarios. The amplitude of conductivity oscillations increases with $B$ for energy $E$ less than $U_\infty$ but decreases in the opposite case $E>U_\infty$. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_18399 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Effect of a perpendicular magnetic field on bilayer graphene under dual gating Saley, Mouhamadou Hassane Mouhafid, Abderrahim El Jellal, Ahmed Mesoscale and Nanoscale Physics By studying the impact of a perpendicular magnetic field $B$ on AB-bilayer graphene (AB-BLG) under dual gating, we yield several key findings for the ballistic transport of gate $U_\infty$. Firstly, we discover that the presence of $B$ leads to a decrease in transmission. At a high value of $B$, we notice the occurrence of anti-Klein tunneling over a significant area. Secondly, in contrast to the results reported in the literature, where high peaks were found with an increasing in-plane pseudomagnetic field applied to AB-BLG, we find a decrease in conductivity as $B$ increases. However, it is worth noting that in both cases, the number of oscillations decreases compared to the result in the study where no magnetic field was present $(B = 0)$. Thirdly, at the neutrality point, we demonstrate that the conductivity decreases and eventually reaches zero for a high value of $B$, which contrasts with the result that the conductivity remains unchanged regardless of the value taken by the in-plane field. Finally, we consider the diffusive transport with gate $U_\infty = 0.2 γ_1$ and observe two scenarios. The amplitude of conductivity oscillations increases with $B$ for energy $E$ less than $U_\infty$ but decreases in the opposite case $E>U_\infty$. |
| title | Effect of a perpendicular magnetic field on bilayer graphene under dual gating |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2402.18399 |