High-speed CMOS compatible plasmonic modulator for non-contact wafer-level testing
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866909122842066944 |
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| author | Naeini, Maryam Sadat Amiri Berini, Pierre |
| author_facet | Naeini, Maryam Sadat Amiri Berini, Pierre |
| contents | Wafer-level testing is an important step for process and quality control of electronic chips in integrated circuit (IC) manufacturing which occurs before packaging. The process of wafer probing in its conventional contacting schemes, becomes more complicated as ICs move to smaller technology nodes and more compact designs, greatly increasing testing costs. Non-contact optical wafer probing can overcome physical probing complications, reducing costs, and increasing throughput and reliability. In this paper, a CMOS compatible, broadband (22 GHz), small footprint (5 μm dia.) plasmonic electro-optic modulator of low insertion loss (4 dB) and wide optical working bandwidth (100 nm) is proposed and demonstrated as a potential solution for wafer-level optical testing. The device modulates in reflection an incident optical carrier emerging from an optical fiber in a non-contact arrangement, to work as a data output channel from the wafer. A modulation depth of over 2% is achieved which should be sufficient to meet the requirements of wafer-level testing. The device can be placed anywhere on wafer. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2402_18421 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | High-speed CMOS compatible plasmonic modulator for non-contact wafer-level testing Naeini, Maryam Sadat Amiri Berini, Pierre Optics Applied Physics Wafer-level testing is an important step for process and quality control of electronic chips in integrated circuit (IC) manufacturing which occurs before packaging. The process of wafer probing in its conventional contacting schemes, becomes more complicated as ICs move to smaller technology nodes and more compact designs, greatly increasing testing costs. Non-contact optical wafer probing can overcome physical probing complications, reducing costs, and increasing throughput and reliability. In this paper, a CMOS compatible, broadband (22 GHz), small footprint (5 μm dia.) plasmonic electro-optic modulator of low insertion loss (4 dB) and wide optical working bandwidth (100 nm) is proposed and demonstrated as a potential solution for wafer-level optical testing. The device modulates in reflection an incident optical carrier emerging from an optical fiber in a non-contact arrangement, to work as a data output channel from the wafer. A modulation depth of over 2% is achieved which should be sufficient to meet the requirements of wafer-level testing. The device can be placed anywhere on wafer. |
| title | High-speed CMOS compatible plasmonic modulator for non-contact wafer-level testing |
| topic | Optics Applied Physics |
| url | https://arxiv.org/abs/2402.18421 |