Breakdown of the static dielectric screening approximation of Coulomb interactions in atomically thin semiconductors
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arXiv
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| Auteurs principaux: | , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866909463485612032 |
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| author | Mhenni, Amine Ben Van Tuan, Dinh Geilen, Leonard Petrić, Marko M. Erdi, Melike Watanabe, Kenji Taniguchi, Takashi Tongay, Sefaattin Müller, Kai Wilson, Nathan P. Finley, Jonathan J. Dery, Hanan Barbone, Matteo |
| author_facet | Mhenni, Amine Ben Van Tuan, Dinh Geilen, Leonard Petrić, Marko M. Erdi, Melike Watanabe, Kenji Taniguchi, Takashi Tongay, Sefaattin Müller, Kai Wilson, Nathan P. Finley, Jonathan J. Dery, Hanan Barbone, Matteo |
| contents | Coulomb interactions in atomically thin materials are uniquely sensitive to variations in the dielectric screening of the environment, which can be used to control quasiparticles and exotic quantum many-body phases. A static approximation of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, has been until now sufficient. Here, we use charge-tunable exciton resonances to study screening effects in transition metal dichalcogenide monolayers embedded in materials with dielectric constants ranging from 4 to more than 1000. In contrast to expectations, we observe a blueshift of the exciton resonance exceeding 30 meV for larger dielectric constant environments. By employing a dynamical screening model, we find that while the exciton binding energy remains mostly controlled by the static dielectric response, the exciton self-energy is dominated by the high-frequency response. Dielectrics with markedly different static and high-frequency screening enable the selective addressing of distinct many-body effects in layered materials and their heterostructures, expanding the tunability range and offering new routes to detect and control correlated quantum many-body states and to design optoelectronic and quantum devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_18639 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Breakdown of the static dielectric screening approximation of Coulomb interactions in atomically thin semiconductors Mhenni, Amine Ben Van Tuan, Dinh Geilen, Leonard Petrić, Marko M. Erdi, Melike Watanabe, Kenji Taniguchi, Takashi Tongay, Sefaattin Müller, Kai Wilson, Nathan P. Finley, Jonathan J. Dery, Hanan Barbone, Matteo Mesoscale and Nanoscale Physics Materials Science Coulomb interactions in atomically thin materials are uniquely sensitive to variations in the dielectric screening of the environment, which can be used to control quasiparticles and exotic quantum many-body phases. A static approximation of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, has been until now sufficient. Here, we use charge-tunable exciton resonances to study screening effects in transition metal dichalcogenide monolayers embedded in materials with dielectric constants ranging from 4 to more than 1000. In contrast to expectations, we observe a blueshift of the exciton resonance exceeding 30 meV for larger dielectric constant environments. By employing a dynamical screening model, we find that while the exciton binding energy remains mostly controlled by the static dielectric response, the exciton self-energy is dominated by the high-frequency response. Dielectrics with markedly different static and high-frequency screening enable the selective addressing of distinct many-body effects in layered materials and their heterostructures, expanding the tunability range and offering new routes to detect and control correlated quantum many-body states and to design optoelectronic and quantum devices. |
| title | Breakdown of the static dielectric screening approximation of Coulomb interactions in atomically thin semiconductors |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2402.18639 |