Layer-dependent Raman spectroscopy of ultrathin Ta$_2$Pd$_3$Te$_5$
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arXiv
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| Format: | Preprint |
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2024
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| _version_ | 1866913247793250304 |
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| author | Sun, Zhenyu Guo, Zhaopeng Yan, Dayu Cheng, Peng Chen, Lan Shi, Youguo Huang, Yuan Wang, Zhijun Wu, Kehui Feng, Baojie |
| author_facet | Sun, Zhenyu Guo, Zhaopeng Yan, Dayu Cheng, Peng Chen, Lan Shi, Youguo Huang, Yuan Wang, Zhijun Wu, Kehui Feng, Baojie |
| contents | Two-dimensional topological insulators (2DTIs) or quantum spin Hall insulators are attracting increasing attention due to their potential applications in next-generation spintronic devices. Despite their promising prospects, realizable 2DTIs are still limited. Recently, Ta2Pd3Te5, a semiconducting van der Waals material, has shown spectroscopic evidence of quantum spin Hall states. However, achieving controlled preparation of few- to monolayer samples, a crucial step in realizing quantum spin Hall devices, has not yet been achieved. In this work, we fabricated few- to monolayer Ta$_2$Pd$_3$Te$_5$ and performed systematic thickness- and temperature-dependent Raman spectroscopy measurements. Our results demonstrate that Raman spectra can provide valuable information to determine the thickness of Ta2Pd3Te5 thin flakes. Moreover, our angle-resolved polarized Raman (ARPR) spectroscopy measurements show that the intensities of the Raman peaks are strongly anisotropic due to the quasi-one-dimensional atomic structure, providing a straightforward method to determine its crystalline orientation. Our findings may stimulate further efforts to realize quantum devices based on few or monolayer Ta$_2$Pd$_3$Te$_5$. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2402_18833 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Layer-dependent Raman spectroscopy of ultrathin Ta$_2$Pd$_3$Te$_5$ Sun, Zhenyu Guo, Zhaopeng Yan, Dayu Cheng, Peng Chen, Lan Shi, Youguo Huang, Yuan Wang, Zhijun Wu, Kehui Feng, Baojie Materials Science Two-dimensional topological insulators (2DTIs) or quantum spin Hall insulators are attracting increasing attention due to their potential applications in next-generation spintronic devices. Despite their promising prospects, realizable 2DTIs are still limited. Recently, Ta2Pd3Te5, a semiconducting van der Waals material, has shown spectroscopic evidence of quantum spin Hall states. However, achieving controlled preparation of few- to monolayer samples, a crucial step in realizing quantum spin Hall devices, has not yet been achieved. In this work, we fabricated few- to monolayer Ta$_2$Pd$_3$Te$_5$ and performed systematic thickness- and temperature-dependent Raman spectroscopy measurements. Our results demonstrate that Raman spectra can provide valuable information to determine the thickness of Ta2Pd3Te5 thin flakes. Moreover, our angle-resolved polarized Raman (ARPR) spectroscopy measurements show that the intensities of the Raman peaks are strongly anisotropic due to the quasi-one-dimensional atomic structure, providing a straightforward method to determine its crystalline orientation. Our findings may stimulate further efforts to realize quantum devices based on few or monolayer Ta$_2$Pd$_3$Te$_5$. |
| title | Layer-dependent Raman spectroscopy of ultrathin Ta$_2$Pd$_3$Te$_5$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/2402.18833 |