All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy

Documenti analoghi

• All‐Epitaxial Self‐Assembly of Silicon Color Centers Confined Within Sub‐Nanometer Thin Layers Using Ultra‐Low Temperature Epitaxy
  di: Johannes Aberl, et al.
  Pubblicazione: (2024)
• Telecom light-emitting diodes based on nanoconfined self-assembled silicon-based color centers
  di: Salomon, Andreas, et al.
  Pubblicazione: (2024)
• Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
  di: Wilflingseder, Christoph, et al.
  Pubblicazione: (2024)
• Self-Assembled Telecom Color Centers in Silicon and Their Growth Environment
  di: Marböck, Jacqueline, et al.
  Pubblicazione: (2026)
• A group-IV double heterostructure light emitting diode for room temperature gain in Silicon
  di: Salomon, Andreas, et al.
  Pubblicazione: (2024)