Xie, M., Hafezi, M., & Sarma, S. D. (2024). Long-lived Topological Flatband Excitons in Semiconductor Moiré Heterostructures: A Bosonic Kane-Mele Model Platform.
Cita Chicago Style (17a ed.)Xie, Ming, Mohammad Hafezi, y Sankar Das Sarma. Long-lived Topological Flatband Excitons in Semiconductor Moiré Heterostructures: A Bosonic Kane-Mele Model Platform. 2024.
Cita MLA (9a ed.)Xie, Ming, et al. Long-lived Topological Flatband Excitons in Semiconductor Moiré Heterostructures: A Bosonic Kane-Mele Model Platform. 2024.
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