Multi-junction surface ion trap for quantum computing

Fuente: arXiv
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Autores principales: Sterk, J. D., Blain, M. G., Delaney, M., Haltli, R., Heller, E., Holterhoff, A. L., Jennings, T., Jimenez, N., Kozhanov, A., Meinelt, Z., Ou, E., Van Der Wall, J., Noel, C., Stick, D.
Formato: Preprint
Publicado: 2024
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author Sterk, J. D.
Blain, M. G.
Delaney, M.
Haltli, R.
Heller, E.
Holterhoff, A. L.
Jennings, T.
Jimenez, N.
Kozhanov, A.
Meinelt, Z.
Ou, E.
Van Der Wall, J.
Noel, C.
Stick, D.
author_facet Sterk, J. D.
Blain, M. G.
Delaney, M.
Haltli, R.
Heller, E.
Holterhoff, A. L.
Jennings, T.
Jimenez, N.
Kozhanov, A.
Meinelt, Z.
Ou, E.
Van Der Wall, J.
Noel, C.
Stick, D.
contents Surface ion traps with two-dimensional layouts of trapping regions are natural architectures for storing large numbers of ions and supporting the connectivity needed to implement quantum algorithms. Many of the components and operations needed to fully exploit this architecture have already been demonstrated, including operation at cryogenic temperatures with low heating, low excitation transport, and ion control and detection with integrated photonics. Here we demonstrate a trap that addresses the scaling challenge of increasing power dissipation as the RF electrode increases in size. By raising the RF electrode and removing most of the insulating dielectric layer below it we reduce both ohmic and dielectric power dissipation. We also measure heating rates across a range of motional frequencies and for different voltage sources in a trap with a raised RF electrode but solid dielectric.
format Preprint
id arxiv_https___arxiv_org_abs_2403_00208
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Multi-junction surface ion trap for quantum computing
Sterk, J. D.
Blain, M. G.
Delaney, M.
Haltli, R.
Heller, E.
Holterhoff, A. L.
Jennings, T.
Jimenez, N.
Kozhanov, A.
Meinelt, Z.
Ou, E.
Van Der Wall, J.
Noel, C.
Stick, D.
Quantum Physics
Atomic Physics
Surface ion traps with two-dimensional layouts of trapping regions are natural architectures for storing large numbers of ions and supporting the connectivity needed to implement quantum algorithms. Many of the components and operations needed to fully exploit this architecture have already been demonstrated, including operation at cryogenic temperatures with low heating, low excitation transport, and ion control and detection with integrated photonics. Here we demonstrate a trap that addresses the scaling challenge of increasing power dissipation as the RF electrode increases in size. By raising the RF electrode and removing most of the insulating dielectric layer below it we reduce both ohmic and dielectric power dissipation. We also measure heating rates across a range of motional frequencies and for different voltage sources in a trap with a raised RF electrode but solid dielectric.
title Multi-junction surface ion trap for quantum computing
topic Quantum Physics
Atomic Physics
url https://arxiv.org/abs/2403.00208