Spin gapped metals: A novel class of materials for multifunctional spintronic devices
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arXiv
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| Format: | Preprint |
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2024
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| author | Sasioglu, E. Tas, M. Ghosh, S. Beida, W. Blugel, B. Sanyal S. Mertig, I. Galanakis, I. |
| author_facet | Sasioglu, E. Tas, M. Ghosh, S. Beida, W. Blugel, B. Sanyal S. Mertig, I. Galanakis, I. |
| contents | Gapped metals, a recently proposed class of materials, possess a band gap slightly above or below the Fermi level, behaving as intrinsic p- or n-type semiconductors without requiring external doping. Inspired by this concept, we propose a novel material class: "spin gapped metals". These materials exhibit intrinsic p- or n-type character independently for each spin channel, similar to dilute magnetic semiconductors but without the need for transition metal doping. A key advantage of spin gapped metals lies in the absence of band tails that exist within the band gap of conventional p- and n-type semiconductors. Band tails degrade the performance of devices like tunnel field-effect transistors (causing high subthreshold slopes) and negative differential resistance tunnel diodes (resulting in low peak-to-valley current ratios). Here, we demonstrate the viability of spin gapped metals using first-principles electronic band structure calculations on half-Heusler compounds. Our analysis reveals compounds displaying both gapped metal and spin gapped metal behavior, paving the way for next-generation multifunctional devices in spintronics and nanoelectronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_00936 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Spin gapped metals: A novel class of materials for multifunctional spintronic devices Sasioglu, E. Tas, M. Ghosh, S. Beida, W. Blugel, B. Sanyal S. Mertig, I. Galanakis, I. Materials Science Gapped metals, a recently proposed class of materials, possess a band gap slightly above or below the Fermi level, behaving as intrinsic p- or n-type semiconductors without requiring external doping. Inspired by this concept, we propose a novel material class: "spin gapped metals". These materials exhibit intrinsic p- or n-type character independently for each spin channel, similar to dilute magnetic semiconductors but without the need for transition metal doping. A key advantage of spin gapped metals lies in the absence of band tails that exist within the band gap of conventional p- and n-type semiconductors. Band tails degrade the performance of devices like tunnel field-effect transistors (causing high subthreshold slopes) and negative differential resistance tunnel diodes (resulting in low peak-to-valley current ratios). Here, we demonstrate the viability of spin gapped metals using first-principles electronic band structure calculations on half-Heusler compounds. Our analysis reveals compounds displaying both gapped metal and spin gapped metal behavior, paving the way for next-generation multifunctional devices in spintronics and nanoelectronics. |
| title | Spin gapped metals: A novel class of materials for multifunctional spintronic devices |
| topic | Materials Science |
| url | https://arxiv.org/abs/2403.00936 |