Gespeichert in:
| Hauptverfasser: | , , , , , , , , , |
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| Format: | Preprint |
| Veröffentlicht: |
2024
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| Schlagworte: | |
| Online-Zugang: | https://arxiv.org/abs/2403.01019 |
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Inhaltsangabe:
- Two-photon absorption in indirect gap semiconductors is an frequently encountered, but not well-understood phenomenon. To address this, the Real Density Matrix Approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach produces an analytical expression for the dispersion of the two-photon absorption coefficient for indirect-gap materials, and can be used to explain trends in reported experimental data for bulk silicon both old and new with minimal fitting.