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| Main Authors: | , , , , |
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| Format: | Preprint |
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2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2403.01808 |
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| _version_ | 1866913280956563456 |
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| author | Patlagan, Larisa Reisner, George M. Neyshtadt-Ronel, Shani Kalcheim, Yoav Fisher, Bertina |
| author_facet | Patlagan, Larisa Reisner, George M. Neyshtadt-Ronel, Shani Kalcheim, Yoav Fisher, Bertina |
| contents | The phase diagram of VO$_2$ strained or doped with several trivalent ions consists of four phases; in order of increasing temperatures, three (M1, T and M2) are insulating while the fourth (R), above ~340 K, is metallic. These phases and the three phase transitions have been thoroughly investigated for about half a century by a wide variety of techniques, including electronic transport. While an upwards jump of the resistance of up to a factor of 2 was observed at the T-M2 transition and a drop of several orders of magnitude was observed at the M2$\to$R one, resistive switching at the M1$\to$T transition remained elusive over all these years. Here we report on the investigation of Ga- and Al-doped VO$_2$ single crystals, following the rather surprising appearance of a small and steep drop of a factor of ~ 0.12 in the resistance of Ga-doped VO$_2$ single crystals detected by pulsed and DC I-V measurements carried out at room temperature, below the T$\to$M2 phase transition. Similar results were obtained also from measurements on Al-doped VO2 single crystals. Raman spectra of Ga-, and Al-doped crystals resolved their structures as function of temperature. The accumulated results of the measurements on Ga-, and Al-doped single crystals provide evidence for identifying the resistive switching at T$_{\rm RS}$<T$_{\rm T\to M2}$ with the M1$\to$T transition. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_01808 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electric field induced resistive switching in M$^{3+}_x$V$_{1-x}$O$_2$ (M$^{3+}$= Ga$^{3+}$, Al$^{3+}$) single crystals at temperatures below the T $\to$ M2 phase transition Patlagan, Larisa Reisner, George M. Neyshtadt-Ronel, Shani Kalcheim, Yoav Fisher, Bertina Strongly Correlated Electrons Materials Science The phase diagram of VO$_2$ strained or doped with several trivalent ions consists of four phases; in order of increasing temperatures, three (M1, T and M2) are insulating while the fourth (R), above ~340 K, is metallic. These phases and the three phase transitions have been thoroughly investigated for about half a century by a wide variety of techniques, including electronic transport. While an upwards jump of the resistance of up to a factor of 2 was observed at the T-M2 transition and a drop of several orders of magnitude was observed at the M2$\to$R one, resistive switching at the M1$\to$T transition remained elusive over all these years. Here we report on the investigation of Ga- and Al-doped VO$_2$ single crystals, following the rather surprising appearance of a small and steep drop of a factor of ~ 0.12 in the resistance of Ga-doped VO$_2$ single crystals detected by pulsed and DC I-V measurements carried out at room temperature, below the T$\to$M2 phase transition. Similar results were obtained also from measurements on Al-doped VO2 single crystals. Raman spectra of Ga-, and Al-doped crystals resolved their structures as function of temperature. The accumulated results of the measurements on Ga-, and Al-doped single crystals provide evidence for identifying the resistive switching at T$_{\rm RS}$<T$_{\rm T\to M2}$ with the M1$\to$T transition. |
| title | Electric field induced resistive switching in M$^{3+}_x$V$_{1-x}$O$_2$ (M$^{3+}$= Ga$^{3+}$, Al$^{3+}$) single crystals at temperatures below the T $\to$ M2 phase transition |
| topic | Strongly Correlated Electrons Materials Science |
| url | https://arxiv.org/abs/2403.01808 |