Strain-induced valley transport in CrBr$_3$/WSe$_2$/CrBr$_3$ van der Waals heterostructure
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arXiv
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| Auteurs principaux: | , , , |
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| Format: | Preprint |
| Publié: |
2024
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| _version_ | 1866929264119513088 |
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| author | Soriano, David Marian, Damiano Dubey, Prabhat Fiori, Gianluca |
| author_facet | Soriano, David Marian, Damiano Dubey, Prabhat Fiori, Gianluca |
| contents | Two dimensional magnetic materials are at the forefront of the next generation of spintronic devices. The possibility to interface them with other van der Waals materials such as transition metal dichalcogenides has opened new possibilities for the observation of new and exiting physical phenomena. Here, we present a proof-of-concept valleytronic device based on CrBr$_3$-encapsulated WSe$_2$ showing an unprecedented valley splitting of $\sim 100$ meV under compressive strain of the WSe$_2$, able to be tuned by the relative magnetization of the encapsulating layers. Multiscale transport simulations performed on this device show a spin-valley current with a polarization higher than 80$\%$ than is maintained in a range of $\sim$ 0.3 V gate voltage in a field-effect transistor configuration. The impact of the stacking configuration on the valley splitting is also evaluated. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_02188 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Strain-induced valley transport in CrBr$_3$/WSe$_2$/CrBr$_3$ van der Waals heterostructure Soriano, David Marian, Damiano Dubey, Prabhat Fiori, Gianluca Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons Two dimensional magnetic materials are at the forefront of the next generation of spintronic devices. The possibility to interface them with other van der Waals materials such as transition metal dichalcogenides has opened new possibilities for the observation of new and exiting physical phenomena. Here, we present a proof-of-concept valleytronic device based on CrBr$_3$-encapsulated WSe$_2$ showing an unprecedented valley splitting of $\sim 100$ meV under compressive strain of the WSe$_2$, able to be tuned by the relative magnetization of the encapsulating layers. Multiscale transport simulations performed on this device show a spin-valley current with a polarization higher than 80$\%$ than is maintained in a range of $\sim$ 0.3 V gate voltage in a field-effect transistor configuration. The impact of the stacking configuration on the valley splitting is also evaluated. |
| title | Strain-induced valley transport in CrBr$_3$/WSe$_2$/CrBr$_3$ van der Waals heterostructure |
| topic | Mesoscale and Nanoscale Physics Materials Science Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2403.02188 |