Revealing the EuCd_{2}As_{2} Semiconducting Band Gap via n-type La-Doping
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arXiv
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| Auteurs principaux: | , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| author | Nelson, Ryan A. King, Jesaiah Cheng, Shuyu Williams, Archibald J. Jozwiak, Christopher Bostwick, Aaron Rotenberg, Eli Sasmal, Souvik Kao, I-Hsuan Tiwari, Aalok Jones, Natalie R. Cai, Chuting Martin, Emma Dolocan, Andrei Shi, Li Kawakami, Roland Heremans, Joseph P. Katoch, Jyoti Goldberger, Joshua E. |
| author_facet | Nelson, Ryan A. King, Jesaiah Cheng, Shuyu Williams, Archibald J. Jozwiak, Christopher Bostwick, Aaron Rotenberg, Eli Sasmal, Souvik Kao, I-Hsuan Tiwari, Aalok Jones, Natalie R. Cai, Chuting Martin, Emma Dolocan, Andrei Shi, Li Kawakami, Roland Heremans, Joseph P. Katoch, Jyoti Goldberger, Joshua E. |
| contents | EuCd_{2}As_{2} has attracted considerable interest as one of the few magnetic Weyl semimetal candidate materials, although recently there have been emerging reports that claim it to have a semiconducting electronic structure. To resolve this debate, we established the growth of n-type EuCd_{2}As_{2} crystals, to directly visualize the nature of the conduction band using angle resolve photoemission spectroscopy (ARPES). We show that La-doping leads to n-type transport signatures in both the thermopower and Hall effect measurements, in crystals with doping levels at 2 - 6 x 10^{17} e^{-} cm^{-3}. Both p-type and n-type doped samples exhibit antiferromagnetic ordering at 9 K. ARPES experiments at 6 K clearly show the presence of the conduction band minimum at 0.8 eV above the valence band maximum, which is further corroborated by the observation of a 0.71 - 0.72 eV band gap in room temperature diffuse reflectance absorbance measurements. Together these findings unambiguously show that EuCd_{2}As_{2} is indeed a semiconductor with a substantial band gap and not a topological semimetal. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_02556 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Revealing the EuCd_{2}As_{2} Semiconducting Band Gap via n-type La-Doping Nelson, Ryan A. King, Jesaiah Cheng, Shuyu Williams, Archibald J. Jozwiak, Christopher Bostwick, Aaron Rotenberg, Eli Sasmal, Souvik Kao, I-Hsuan Tiwari, Aalok Jones, Natalie R. Cai, Chuting Martin, Emma Dolocan, Andrei Shi, Li Kawakami, Roland Heremans, Joseph P. Katoch, Jyoti Goldberger, Joshua E. Materials Science EuCd_{2}As_{2} has attracted considerable interest as one of the few magnetic Weyl semimetal candidate materials, although recently there have been emerging reports that claim it to have a semiconducting electronic structure. To resolve this debate, we established the growth of n-type EuCd_{2}As_{2} crystals, to directly visualize the nature of the conduction band using angle resolve photoemission spectroscopy (ARPES). We show that La-doping leads to n-type transport signatures in both the thermopower and Hall effect measurements, in crystals with doping levels at 2 - 6 x 10^{17} e^{-} cm^{-3}. Both p-type and n-type doped samples exhibit antiferromagnetic ordering at 9 K. ARPES experiments at 6 K clearly show the presence of the conduction band minimum at 0.8 eV above the valence band maximum, which is further corroborated by the observation of a 0.71 - 0.72 eV band gap in room temperature diffuse reflectance absorbance measurements. Together these findings unambiguously show that EuCd_{2}As_{2} is indeed a semiconductor with a substantial band gap and not a topological semimetal. |
| title | Revealing the EuCd_{2}As_{2} Semiconducting Band Gap via n-type La-Doping |
| topic | Materials Science |
| url | https://arxiv.org/abs/2403.02556 |