Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor
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| Format: | Preprint |
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2024
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| _version_ | 1866917764855234560 |
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| author | Zhao, Qian Sun, Kaitong Wu, Si Li, Hai-Feng |
| author_facet | Zhao, Qian Sun, Kaitong Wu, Si Li, Hai-Feng |
| contents | We synthesized the ferromagnetic EuAgP semiconductor and conducted a comprehensive study of its crystalline, magnetic, heat capacity, band gap, and magnetoresistance properties. Our investigation utilized a combination of X-ray diffraction, optical, and PPMS DynaCool measurements. EuAgP adopts a hexagonal structure with the $P6_3/mmc$ space group. As the temperature decreases, it undergoes a magnetic phase transition from high-temperature paramagnetism to low-temperature ferromagnetism. We determined the ferromagnetic transition temperature to be $T_{\textrm{C}} =$ 16.45(1) K by fitting the measured magnetic susceptibility using a Curie-Weiss law. Heat capacity analysis of EuAgP considered contributions from electrons, phonons, and magnons, revealing $η$ = 0.03 J/mol/$\textrm{K}^\textrm{2}$, indicative of semiconducting behavior. Additionally, we calculated a band gap of $\sim$ 1.324(4) eV based on absorption spectrum measurements. The resistivity versus temperature of EuAgP measured in the absence of an applied magnetic field shows a pronounced peak around $T_{\textrm{C}}$, which diminishes rapidly with increasing applied magnetic fields, ranging from 1 to 14 T. An intriguing phenomenon emerges in the form of a distinct magnetoresistance transition, shifting from positive (e.g., 1.95\% at 300 K and 14 T) to negative (e.g., -30.73\% at 14.25 K and 14 T) as the temperature decreases. This behavior could be attributed to spin-disordered scattering. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2403_03650 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor Zhao, Qian Sun, Kaitong Wu, Si Li, Hai-Feng Strongly Correlated Electrons Materials Science We synthesized the ferromagnetic EuAgP semiconductor and conducted a comprehensive study of its crystalline, magnetic, heat capacity, band gap, and magnetoresistance properties. Our investigation utilized a combination of X-ray diffraction, optical, and PPMS DynaCool measurements. EuAgP adopts a hexagonal structure with the $P6_3/mmc$ space group. As the temperature decreases, it undergoes a magnetic phase transition from high-temperature paramagnetism to low-temperature ferromagnetism. We determined the ferromagnetic transition temperature to be $T_{\textrm{C}} =$ 16.45(1) K by fitting the measured magnetic susceptibility using a Curie-Weiss law. Heat capacity analysis of EuAgP considered contributions from electrons, phonons, and magnons, revealing $η$ = 0.03 J/mol/$\textrm{K}^\textrm{2}$, indicative of semiconducting behavior. Additionally, we calculated a band gap of $\sim$ 1.324(4) eV based on absorption spectrum measurements. The resistivity versus temperature of EuAgP measured in the absence of an applied magnetic field shows a pronounced peak around $T_{\textrm{C}}$, which diminishes rapidly with increasing applied magnetic fields, ranging from 1 to 14 T. An intriguing phenomenon emerges in the form of a distinct magnetoresistance transition, shifting from positive (e.g., 1.95\% at 300 K and 14 T) to negative (e.g., -30.73\% at 14.25 K and 14 T) as the temperature decreases. This behavior could be attributed to spin-disordered scattering. |
| title | Crystal, ferromagnetism, and magnetoresistance with sign reversal in a EuAgP semiconductor |
| topic | Strongly Correlated Electrons Materials Science |
| url | https://arxiv.org/abs/2403.03650 |