Revisiting phonon thermal transport in two-dimensional gallium nitride: higher-order phonon-phonon and phonon-electron scattering
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arXiv
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| Autores principales: | , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866917609376579584 |
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| author | Sun, Jianshi Liu, Xiangjun Xiong, Yucheng Yao, Yuhang Yang, Xiaolong Shao, Cheng Li, Shouhang |
| author_facet | Sun, Jianshi Liu, Xiangjun Xiong, Yucheng Yao, Yuhang Yang, Xiaolong Shao, Cheng Li, Shouhang |
| contents | Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previous studies showed that higher-order phonon-phonon scattering has extremely strong effects on the lattice thermal conductivity of 2D-GaN, which exhibits noticeable discrepancies with lattice thermal conductivity calculated from molecular dynamics. In this work, it is found that the fourth-order interatomic force constants (4th-IFCs) of 2D-GaN are quite sensitive to atomic displacement in the finite different method. The effects of the four-phonon scattering can be severely overestimated with non-convergent 4th-IFCs. The lattice thermal conductivity from three-phonon scattering is reduced by 65.6% due to four-phonon scattering. The reflection symmetry allows significantly more four-phonon processes than three-phonon processes. It was previously thought the electron-phonon interactions have significant effects on the lattice thermal conductivity of two-dimensional materials. However, the effects of phonon-electron interactions on the lattice thermal conductivity of both n-type and p-type 2D-GaN at high charge carrier concentrations can be neglected due to the few phonon-electron scattering channels and the relatively strong four-phonon scattering. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_03673 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Revisiting phonon thermal transport in two-dimensional gallium nitride: higher-order phonon-phonon and phonon-electron scattering Sun, Jianshi Liu, Xiangjun Xiong, Yucheng Yao, Yuhang Yang, Xiaolong Shao, Cheng Li, Shouhang Materials Science Two-dimensional gallium nitride (2D-GaN) has great potential in power electronics and optoelectronics. Heat dissipation is a critical issue for these applications of 2D-GaN. Previous studies showed that higher-order phonon-phonon scattering has extremely strong effects on the lattice thermal conductivity of 2D-GaN, which exhibits noticeable discrepancies with lattice thermal conductivity calculated from molecular dynamics. In this work, it is found that the fourth-order interatomic force constants (4th-IFCs) of 2D-GaN are quite sensitive to atomic displacement in the finite different method. The effects of the four-phonon scattering can be severely overestimated with non-convergent 4th-IFCs. The lattice thermal conductivity from three-phonon scattering is reduced by 65.6% due to four-phonon scattering. The reflection symmetry allows significantly more four-phonon processes than three-phonon processes. It was previously thought the electron-phonon interactions have significant effects on the lattice thermal conductivity of two-dimensional materials. However, the effects of phonon-electron interactions on the lattice thermal conductivity of both n-type and p-type 2D-GaN at high charge carrier concentrations can be neglected due to the few phonon-electron scattering channels and the relatively strong four-phonon scattering. |
| title | Revisiting phonon thermal transport in two-dimensional gallium nitride: higher-order phonon-phonon and phonon-electron scattering |
| topic | Materials Science |
| url | https://arxiv.org/abs/2403.03673 |