Intrinsic anomalous Hall effect arising from antiferromagnetic structure revealed by high-quality NbMnP

Fuente: arXiv
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Autori principali: Arai, Yuki, Hayashi, Junichi, Takeda, Keiki, Tou, Hideki, Sugawara, Hitoshi, Kotegawa, Hisashi
Natura: Preprint
Pubblicazione: 2024
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author Arai, Yuki
Hayashi, Junichi
Takeda, Keiki
Tou, Hideki
Sugawara, Hitoshi
Kotegawa, Hisashi
author_facet Arai, Yuki
Hayashi, Junichi
Takeda, Keiki
Tou, Hideki
Sugawara, Hitoshi
Kotegawa, Hisashi
contents The large anomalous Hall effect (AHE) in antiferromagnetic (AF) materials arises from symmetry breaking equivalent to a ferromagnetic (FM) state. Consequently, this suggests that the observed AHE is induced by the intrinsic mechanism of the band structure effect, which in turn induces dissipationless transverse conductivity. Confirmation of impurity-insensitive anomalous Hall conductivity (AHC) is crucial to conclude this interpretation; however, experimental investigations in AF materials are limited by the lack of high quality systems. In this study, we show that the AF material NbMnP, which exhibits a large AHE, offers a high quality single crystal. Our findings clearly revealed that the large AHC and the tiny net magnetization of $\sim10^{-3} μ_{\mathrm{B}}$/Mn are inherent in this material, irrespective of disorder. NbMnP is a novel AF material that generates FM responses in the regime where there is less impurity scattering.
format Preprint
id arxiv_https___arxiv_org_abs_2403_05058
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Intrinsic anomalous Hall effect arising from antiferromagnetic structure revealed by high-quality NbMnP
Arai, Yuki
Hayashi, Junichi
Takeda, Keiki
Tou, Hideki
Sugawara, Hitoshi
Kotegawa, Hisashi
Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
The large anomalous Hall effect (AHE) in antiferromagnetic (AF) materials arises from symmetry breaking equivalent to a ferromagnetic (FM) state. Consequently, this suggests that the observed AHE is induced by the intrinsic mechanism of the band structure effect, which in turn induces dissipationless transverse conductivity. Confirmation of impurity-insensitive anomalous Hall conductivity (AHC) is crucial to conclude this interpretation; however, experimental investigations in AF materials are limited by the lack of high quality systems. In this study, we show that the AF material NbMnP, which exhibits a large AHE, offers a high quality single crystal. Our findings clearly revealed that the large AHC and the tiny net magnetization of $\sim10^{-3} μ_{\mathrm{B}}$/Mn are inherent in this material, irrespective of disorder. NbMnP is a novel AF material that generates FM responses in the regime where there is less impurity scattering.
title Intrinsic anomalous Hall effect arising from antiferromagnetic structure revealed by high-quality NbMnP
topic Mesoscale and Nanoscale Physics
Strongly Correlated Electrons
url https://arxiv.org/abs/2403.05058