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Main Authors: Balan, Aravind Puthirath, Kumar, Aditya, Reiser, Patrick, Vas, Joseph, Denneulin, Thibaud, Lee, Khoa Dang, Saunderson, Tom G, Tschudin, Marta, Pellet-Mary, Clement, Dutta, Debarghya, Schrader, Carolin, Scholz, Tanja, Geuchies, Jaco, Fu, Shuai, Wang, Hai, Bonanni, Alberta, Lotsch, Bettina V., Nowak, Ulrich, Jakob, Gerhard, Gayles, Jacob, Kovacs, Andras, Dunin-Borkowski, Rafal E., Maletinsky, Patrick, Klaeui, Mathias
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2403.05383
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author Balan, Aravind Puthirath
Kumar, Aditya
Reiser, Patrick
Vas, Joseph
Denneulin, Thibaud
Lee, Khoa Dang
Saunderson, Tom G
Tschudin, Marta
Pellet-Mary, Clement
Dutta, Debarghya
Schrader, Carolin
Scholz, Tanja
Geuchies, Jaco
Fu, Shuai
Wang, Hai
Bonanni, Alberta
Lotsch, Bettina V.
Nowak, Ulrich
Jakob, Gerhard
Gayles, Jacob
Kovacs, Andras
Dunin-Borkowski, Rafal E.
Maletinsky, Patrick
Klaeui, Mathias
author_facet Balan, Aravind Puthirath
Kumar, Aditya
Reiser, Patrick
Vas, Joseph
Denneulin, Thibaud
Lee, Khoa Dang
Saunderson, Tom G
Tschudin, Marta
Pellet-Mary, Clement
Dutta, Debarghya
Schrader, Carolin
Scholz, Tanja
Geuchies, Jaco
Fu, Shuai
Wang, Hai
Bonanni, Alberta
Lotsch, Bettina V.
Nowak, Ulrich
Jakob, Gerhard
Gayles, Jacob
Kovacs, Andras
Dunin-Borkowski, Rafal E.
Maletinsky, Patrick
Klaeui, Mathias
contents The exchange bias phenomenon, inherent in exchange-coupled ferromagnetic and antiferromagnetic systems, has intrigued researchers for decades. Van der Waals materials, with their layered structure, provide an optimal platform for probing such physical phenomena. However, achieving a facile and effective means to manipulate exchange bias in van der Waals heterostructures remains challenging. In this study, we investigate the origin of exchange bias in MnPS3/Fe3GeTe2 van der Waals heterostructures. Our work demonstrates a method to modulate unidirectional exchange anisotropy, achieving an unprecedented nearly 1000% variation through simple thermal cycling. Despite the compensated interfacial spin configuration of MnPS3, magneto-transport measurements reveal a huge 170 mT exchange bias at 5 K, one of the largest observed in van der Waals antiferromagnet-ferromagnet interfaces. This substantial magnitude of the exchange bias is linked to an anomalous weak ferromagnetic ordering in MnPS3 below 40 K. On the other hand, the tunability of exchange bias during thermal cycling is ascribed to the modified arrangement of interfacial atoms and changes in the vdW gap during field cooling. Our findings highlight a robust and easily adjustable exchange bias in van der Waals antiferromagnetic/ferromagnetic heterostructures, presenting a straightforward approach to enhance other interface-related spintronic phenomena for practical applications. A detailed study of the interface reveals migration of atoms between the layers, leading to the formation of amorphous region on either side of the van der Waals gap, underscoring the importance of precise characterization of interfaces in van der Waals heterostructures, which are often presumed to have pristine interfaces.
format Preprint
id arxiv_https___arxiv_org_abs_2403_05383
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS3/Fe3GeTe2 van der Waals Heterostructures
Balan, Aravind Puthirath
Kumar, Aditya
Reiser, Patrick
Vas, Joseph
Denneulin, Thibaud
Lee, Khoa Dang
Saunderson, Tom G
Tschudin, Marta
Pellet-Mary, Clement
Dutta, Debarghya
Schrader, Carolin
Scholz, Tanja
Geuchies, Jaco
Fu, Shuai
Wang, Hai
Bonanni, Alberta
Lotsch, Bettina V.
Nowak, Ulrich
Jakob, Gerhard
Gayles, Jacob
Kovacs, Andras
Dunin-Borkowski, Rafal E.
Maletinsky, Patrick
Klaeui, Mathias
Materials Science
The exchange bias phenomenon, inherent in exchange-coupled ferromagnetic and antiferromagnetic systems, has intrigued researchers for decades. Van der Waals materials, with their layered structure, provide an optimal platform for probing such physical phenomena. However, achieving a facile and effective means to manipulate exchange bias in van der Waals heterostructures remains challenging. In this study, we investigate the origin of exchange bias in MnPS3/Fe3GeTe2 van der Waals heterostructures. Our work demonstrates a method to modulate unidirectional exchange anisotropy, achieving an unprecedented nearly 1000% variation through simple thermal cycling. Despite the compensated interfacial spin configuration of MnPS3, magneto-transport measurements reveal a huge 170 mT exchange bias at 5 K, one of the largest observed in van der Waals antiferromagnet-ferromagnet interfaces. This substantial magnitude of the exchange bias is linked to an anomalous weak ferromagnetic ordering in MnPS3 below 40 K. On the other hand, the tunability of exchange bias during thermal cycling is ascribed to the modified arrangement of interfacial atoms and changes in the vdW gap during field cooling. Our findings highlight a robust and easily adjustable exchange bias in van der Waals antiferromagnetic/ferromagnetic heterostructures, presenting a straightforward approach to enhance other interface-related spintronic phenomena for practical applications. A detailed study of the interface reveals migration of atoms between the layers, leading to the formation of amorphous region on either side of the van der Waals gap, underscoring the importance of precise characterization of interfaces in van der Waals heterostructures, which are often presumed to have pristine interfaces.
title Identifying the Origin of Thermal Modulation of Exchange Bias in MnPS3/Fe3GeTe2 van der Waals Heterostructures
topic Materials Science
url https://arxiv.org/abs/2403.05383