Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts

Fuente: arXiv
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Main Authors: Ryzhii, V., Tang, C., Otsuji, T., Ryzhii, M., Mitin, V., Shur, M. S.
Format: Preprint
Published: 2024
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author Ryzhii, V.
Tang, C.
Otsuji, T.
Ryzhii, M.
Mitin, V.
Shur, M. S.
author_facet Ryzhii, V.
Tang, C.
Otsuji, T.
Ryzhii, M.
Mitin, V.
Shur, M. S.
contents We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot electron transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ultimate modulation frequency of the GC-FET bolometers are determined by the efficiency of the hot-electron energy transfer to the lattice and the GC side contacts due to the 2DEG lateral thermal conductance. The dependences of these mechanisms on the band structure and geometrical parameters open the way for the GC-FET bolometers optimization, in particular, for the enhancement of the maximum modulation frequency.
format Preprint
id arxiv_https___arxiv_org_abs_2403_06373
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts
Ryzhii, V.
Tang, C.
Otsuji, T.
Ryzhii, M.
Mitin, V.
Shur, M. S.
Mesoscale and Nanoscale Physics
We analyze the operation of the hot-electron FET bolometers with the graphene channels (GCs) and the gate barrier layers (BLs). Such bolometers use the thermionic emission of the hot electrons heated by incident modulated THz radiation. The hot electron transfer from the GC into the metal gate. As the THz detectors, these bolometers can operate at room temperature. We show that the response and ultimate modulation frequency of the GC-FET bolometers are determined by the efficiency of the hot-electron energy transfer to the lattice and the GC side contacts due to the 2DEG lateral thermal conductance. The dependences of these mechanisms on the band structure and geometrical parameters open the way for the GC-FET bolometers optimization, in particular, for the enhancement of the maximum modulation frequency.
title Dynamic characteristics of terahertz hot-electron graphene FET bolometers: effect of electron cooling in channel and at side contacts
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2403.06373