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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2403.06379 |
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| _version_ | 1866910361842614272 |
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| author | Zhang, Bo Wan, Wenhui Liu, Yong Ge, Yanfeng |
| author_facet | Zhang, Bo Wan, Wenhui Liu, Yong Ge, Yanfeng |
| contents | Compounds from groups IV and V have been the focus of recent research due to their impressive physical characteristics and structural stability. In this study, the MX monolayers (M=Sn, Pb; N=P, As) are investigated with first-principles calculations based on Boltzmann transport theory. The results show that SnP, SnAs, and PbAs all exhibit indirect band gaps, whereas PbP is the only semiconductor with a direct band gap. One important finding is that intravalley scattering has a significant impact on electron-phonon coupling. Interestingly, changes in carrier concentration do not affect the electron mobility within these MX monolayers, with SnP exhibiting the highest electron mobility among them. Subsequently, the SnP under a 6% biaxial strain is further explored and the results demonstrated a considerable increase in electron mobility to 2,511.9 cm^2/Vs, which is attributable to decreased scattering. This suggests that MX monolayers, especially SnP, are promising options for 2D semiconductor materials in the future. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_06379 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | First-principles Study of Carrier Mobility in MX (M=Sn, Pb; X=P, As) Monolayers Zhang, Bo Wan, Wenhui Liu, Yong Ge, Yanfeng Materials Science Compounds from groups IV and V have been the focus of recent research due to their impressive physical characteristics and structural stability. In this study, the MX monolayers (M=Sn, Pb; N=P, As) are investigated with first-principles calculations based on Boltzmann transport theory. The results show that SnP, SnAs, and PbAs all exhibit indirect band gaps, whereas PbP is the only semiconductor with a direct band gap. One important finding is that intravalley scattering has a significant impact on electron-phonon coupling. Interestingly, changes in carrier concentration do not affect the electron mobility within these MX monolayers, with SnP exhibiting the highest electron mobility among them. Subsequently, the SnP under a 6% biaxial strain is further explored and the results demonstrated a considerable increase in electron mobility to 2,511.9 cm^2/Vs, which is attributable to decreased scattering. This suggests that MX monolayers, especially SnP, are promising options for 2D semiconductor materials in the future. |
| title | First-principles Study of Carrier Mobility in MX (M=Sn, Pb; X=P, As) Monolayers |
| topic | Materials Science |
| url | https://arxiv.org/abs/2403.06379 |