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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2403.06630 |
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| _version_ | 1866913415298023424 |
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| author | Kumar, M. Nowzari, A. Persson, A. R. Jeppesen, S. Wacker, A. Bastard, G. Wallenberg, R. Capasso, F. Maisi, V. F. Samuelson, L. |
| author_facet | Kumar, M. Nowzari, A. Persson, A. R. Jeppesen, S. Wacker, A. Bastard, G. Wallenberg, R. Capasso, F. Maisi, V. F. Samuelson, L. |
| contents | We demonstrate experimentally non-equilibrium transport in unipolar quasi-1D hot electron devices reaching ballistic limit. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free 1D-epitaxy and flexible bandgap engineering. We show experimentally the control of hot electron injection with a graded conduction band profile and subsequent filtering of hot and relaxed electrons with rectangular energy barriers. The number of electron passing the barrier depends exponentially on the transport length with a mean free path of 200 - 260 nm and reaches ballistic transport regime for the shortest devices with 70 % of the electrons flying freely through the base electrode and the barrier reflections limiting the transport to the collector. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_06630 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Hot Carrier Nanowire Transistors at the Ballistic Limit Kumar, M. Nowzari, A. Persson, A. R. Jeppesen, S. Wacker, A. Bastard, G. Wallenberg, R. Capasso, F. Maisi, V. F. Samuelson, L. Mesoscale and Nanoscale Physics Materials Science We demonstrate experimentally non-equilibrium transport in unipolar quasi-1D hot electron devices reaching ballistic limit. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free 1D-epitaxy and flexible bandgap engineering. We show experimentally the control of hot electron injection with a graded conduction band profile and subsequent filtering of hot and relaxed electrons with rectangular energy barriers. The number of electron passing the barrier depends exponentially on the transport length with a mean free path of 200 - 260 nm and reaches ballistic transport regime for the shortest devices with 70 % of the electrons flying freely through the base electrode and the barrier reflections limiting the transport to the collector. |
| title | Hot Carrier Nanowire Transistors at the Ballistic Limit |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2403.06630 |