Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2024
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| _version_ | 1866913265758502912 |
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| author | Cowie, Megan Constantinou, Procopios C. Curson, Neil J. Stock, Taylor J. Z. Grutter, Peter |
| author_facet | Cowie, Megan Constantinou, Procopios C. Curson, Neil J. Stock, Taylor J. Z. Grutter, Peter |
| contents | We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number and mobility fluctuations with a range of characteristic timescales; taken together as an ensemble, they give rise to a $1/f$ power spectral trend. Such individual defect fluctuations at the Si/SiO$_2$ interface impair the performance and reliability of nanoscale semiconductor devices, and will be a significant source of noise in semiconductor-based quantum sensors and computers. The fluctuations measured here are associated with a four-fold competition of rates, including slow two-state switching on the order of seconds and, in one state, fast switching on the order of nanoseconds which is associated with energy loss. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_07251 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface Cowie, Megan Constantinou, Procopios C. Curson, Neil J. Stock, Taylor J. Z. Grutter, Peter Mesoscale and Nanoscale Physics Materials Science We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and amplitudes. These two-level systems lead to correlated carrier number and mobility fluctuations with a range of characteristic timescales; taken together as an ensemble, they give rise to a $1/f$ power spectral trend. Such individual defect fluctuations at the Si/SiO$_2$ interface impair the performance and reliability of nanoscale semiconductor devices, and will be a significant source of noise in semiconductor-based quantum sensors and computers. The fluctuations measured here are associated with a four-fold competition of rates, including slow two-state switching on the order of seconds and, in one state, fast switching on the order of nanoseconds which is associated with energy loss. |
| title | Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2403.07251 |