Image de couverture de livre

Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface

Fuente: arXiv

Enregistré dans:

Détails bibliographiques
Auteurs principaux:	Cowie, Megan, Constantinou, Procopios C., Curson, Neil J., Stock, Taylor J. Z., Grutter, Peter
Format:	Preprint
Publié:	2024
Sujets:	Mesoscale and Nanoscale Physics Materials Science
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

Documents similaires

Spatially resolved dielectric loss at the Si/SiO$_2$ interface
par: Cowie, Megan, et autres
Publié: (2023)

Blocking transition of interface traps in MoS$_2$-on-SiO$_2$ FETs
par: Jana, Santu Prasad, et autres
Publié: (2023)

Needle in a haystack: efficiently finding atomically defined quantum dots for electrostatic force microscopy
par: Bustamante, José, et autres
Publié: (2024)

The cell-centered Finite-Volume self-consistent approach for heterostructures: 1D electron gas at the Si-SiO2 interface
par: Mosallanejad, Vahid, et autres
Publié: (2021)

Wide Effective Work-Function Tuning of Al/SiO$_2$/Si Junction Achieved with Graphene Interlayer at Al/SiO$_2$ Interface
par: Song, Wonho, et autres
Publié: (2022)

Wedge-type engineered analog SiO$_\mathrm{x}$/Cu/SiO$_\mathrm{x}$-Memristive Devices for Neuromorphic Applications
par: Lamprecht, Rouven, et autres
Publié: (2024)

Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures
par: Massai, L., et autres
Publié: (2023)

Laser Annealed SiO2/Si1-xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment and Computation
par: Ricciarelli, Damiano, et autres
Publié: (2024)

Dynamical control of random telegraph noise in magnetic tunnel junctions
par: Elyasi, Mehrdad, et autres
Publié: (2025)

Gate-tuneable single-photon emitters in WSe2 monolayer created via AFM nanoindentation on rigid SiO2/Si substrates
par: Dash, Ajit Kumar, et autres
Publié: (2026)

Two-level system loss characterization of NbTi superconducting resonators on Si/SiO2 substrates
par: Kim, Bongkeon, et autres
Publié: (2025)

Room Temperature Quantum Control of N-Donor Electrons at Si/SiO2 Interface
par: Chakraborty, Soumya, et autres
Publié: (2024)

Thermal Boundary Resistance Measurement and Analysis Across SiC/SiO2 Interface
par: Deng, Shichen, et autres
Publié: (2019)

Hydrogen Passivation Effects on Spatially Resolved Charge Trap Densities in Si(100)-SiO$_2$
par: Czarnecki, Adam J., et autres
Publié: (2025)

Quantum confinement in semiconductor random alloys: a case study on Si/SiGe/Si
par: Dick, Daniel, et autres
Publié: (2026)

Characterization of individual charge fluctuators in Si/SiGe quantum dots
par: Ye, Feiyang, et autres
Publié: (2024)

Inhomogeneous hysteresis in local STM tunnel conductance with gate-voltage in single-layer MoS$_2$ on SiO$_2$
par: Jana, Santu Prasad, et autres
Publié: (2024)

Impact of interdigitated electrodes design on the low frequency and random telegraph noise of single-layer graphene micro ribbons
par: Samara, Georgia, et autres
Publié: (2025)

Correlations of spin splitting and orbital fluctuations due to 1/f charge noise in the Si/SiGe Quantum Dot
par: Kępa, Marcin, et autres
Publié: (2023)

Stabilizing an individual charge fluctuator in a Si/SiGe quantum dot
par: Ye, Feiyang, et autres
Publié: (2024)

Giant and Oscillatory Junction Magnetoresistance via RKKY-like Spin Coupling in Spin-Gapless Mn$_2$CoAl/SiO$_2$/p-Si Heterostructures
par: Maji, Nilay, et autres
Publié: (2026)

Thermal resistance from non-equilibrium phonons at Si-Ge interface
par: Li, Xun, et autres
Publié: (2022)

Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder
par: Losert, Merritt P., et autres
Publié: (2024)

Multi-level charge fluctuations in a Si/SiGe double quantum dot device
par: Albrecht, Dylan, et autres
Publié: (2026)

Probing Electrocatalytic Gas Evolution Reaction at Pt by Force Noise Measurements. Part 2. Oxygen
par: Bodappa, Nataraju, et autres
Publié: (2025)

Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
par: Fattal, I., et autres
Publié: (2025)

Thermal conductance across bonded SiOx-SiOx interfaces in hybrid bonding process
par: Zhang, Xingqiang, et autres
Publié: (2026)

Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures
par: Huckemann, Till, et autres
Publié: (2024)

Element-specific, non-destructive profiling of layered heterostructures
par: D'Anna, Nicolò, et autres
Publié: (2024)

Increasing valley splitting in Si/SiGe by practically achievable heterostructure profiles
par: Cvitkovich, Lukas, et autres
Publié: (2026)

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures
par: Ma, Jingrui, et autres
Publié: (2026)

Enhanced performance of MoS$_2$/SiO$_2$ field-effect transistors by hexamethyldisilazane (HMDS) encapsulation
par: Jana, Santu Prasad, et autres
Publié: (2024)

Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe
par: Struck, Tom, et autres
Publié: (2023)

Transport of Majorana Bound State in the presence of telegraph noise
par: Sahu, Dibyajyoti, et autres
Publié: (2024)

Humidity Sensing Properties of Different Atomic Layers of Graphene on SiO2/Si Substrate
par: Gao, Qiang, et autres
Publié: (2024)

1/f frequency fluctuations due to kinetic inductance in CoSi$_2$ microwave cavities
par: Zeng, Weijun, et autres
Publié: (2024)

Strain-induced effects on band-to-band tunnelling and trap-assisted tunnelling in Si examined by experiment and theory
par: Murphy-Armando, Felipe, et autres
Publié: (2017)

Active Noise Reduction in Si/SiGe Gated Quantum Dots
par: Bharadwaj, Rajat, et autres
Publié: (2025)

Measuring pulse heating in Si quantum dots with individual two-level fluctuators
par: Ye, Feiyang, et autres
Publié: (2025)

Strain Engineering for Transition Metal Defects in SiC
par: Tissot, Benedikt, et autres
Publié: (2023)